Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) using pulsed laser deposition

2009 ◽  
Vol 517 (6) ◽  
pp. 2092-2098 ◽  
Author(s):  
D.Y. Wang ◽  
P. Yun ◽  
Y. Wang ◽  
H.L.W. Chan ◽  
C.L. Choy
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon

2003 ◽  
Vol 18 (8) ◽  
pp. 1753-1756 ◽  
Author(s):  
Woong Choi ◽  
Tim Sands
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Oxygen ◽  
Laser Deposition ◽  
High Oxygen Partial Pressure ◽  
Grain Structures ◽  
Effect Of Oxygen

The effect of oxygen partial pressure on the preferred orientation of CeO2 thin films was investigated by depositing CeO2 thin films and Pb(Zr, Ti)O3/CeO2 multilayers on Si (100) substrates by pulsed laser deposition. CeO2 thin films exhibited random polycrystalline grain structures at high oxygen partial pressure (≥40 mtorr), a result that is contrary to previous reports. The relationship of the preferred orientations observed between Pb(Zr, Ti)O3 films and the CeO2 layer underneath confirmed that random polycrystalline CeO2 was obtained at high oxygen partial pressure. It was suggested that x-ray diffraction data in previous reports might have been misinterpreted.

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. McKnight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

AbstractBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in an continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

scholarly journals Electrical and Magnetic Properties of Polycrystalline Mn-Doped BaTiO3 Thin Films Grown on Pt/Sapphire Substrates by Pulsed Laser Deposition

2010 ◽  
Vol 67 ◽  
pp. 212-217 ◽  
Author(s):  
Yao Shuai ◽  
Sheng Qiang Zhou ◽  
Heidemarie Schmidt
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Magnetic Polaron ◽  
Low Oxygen ◽  
Sapphire Substrates ◽  
Mn Doped

5 at.% Mn-doped and undoped, 200 nm thick BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on Pt/sapphire substrates. X-ray diffraction (XRD) measurements reveal the same polycrystalline single-phase perovskite structure for all the thin films despite the different oxygen partial pressure, while their preferred orientation strongly depends on the oxygen partial pressure. The 5 at. % Mn-doping decreases the dielectric loss of the Mn-doped BaTiO3 thin films, however, their relative permittivity is also decreased. Ferroelectricity has been probed on the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. A ferromagnetic coupling of the Mn dopant ions has been probed at room tempetature on the Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is understood in terms of the bound magnetic polaron model.

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