Application of Ni-doped ZnO nanorods in surface acoustic wave ultraviolet photodetectors

A surface acoustic wave ultraviolet photodetector was fabricated on a ZnO thin film with pure and Ni-doped ZnO nanorods deposited on a Si substrate. Piezoelectric ZnO thin films were grown on Si through radio-frequency magnetron sputtering, and ZnO nanorods were synthesized on ZnO thin films by using the hydrothermal method. The crystalline structure, surface morphology, and luminescent characteristics of ZnO films and nanorods were examined using X-ray diffraction and photoluminescence spectrometers and scanning electron microscope. The performance of the surface acoustic wave photodetector was evaluated using the variations in surface capacitance, insertion loss, and phase shift. ZnO nanorods became shorter and thicker with an increase in the concentration of Ni doping; however, the variations in surface capacitance of Ni-doped ZnO nanorods were greater than those of pure ZnO nanorods obtained under ultraviolet irradiation. Devices with Ni-doped ZnO nanorods exhibited larger shifts in insertion loss and phase than those with pure ZnO nanorods did.

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.