Characterization of Ga0.52In0.48P/GaAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy

2000 ◽  
Vol 212 (1-2) ◽  
pp. 49-55 ◽  
Author(s):  
S.F Yoon ◽  
P.Y Lui ◽  
H.Q Zheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Transient Spectroscopy

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Deep level transient spectroscopy of AlxGa1 xAs/GaAs single-quantum-well lasers

2004 ◽  
Vol 19 (7) ◽  
pp. 897-901 ◽  
Author(s):  
K Zdansky ◽  
V Gorodynskyy ◽  
J Kosíková ◽  
A Rudra ◽  
E Kapon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Transient Spectroscopy
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