Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

2014 ◽  
Vol 29 (3) ◽  
pp. 035002 ◽  
Author(s):  
R Muralidharan ◽  
V Ramesh ◽  
Puspashree Mishra ◽  
T Srinivasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate

Structural and spectroscopy characterization of coaxial GaAs/GaAsSb/GaAs single quantum well nanowires fabricated by molecular beam epitaxy

CrystEngComm ◽  
2019 ◽  
Vol 21 (28) ◽  
pp. 4150-4157 ◽  
Author(s):  
Jian Zhang ◽  
Jilong Tang ◽  
Yubin Kang ◽  
Fengyuan Lin ◽  
Dan Fang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Emission Wavelength ◽  
Single Quantum ◽  
Single Quantum Well

Through the growth and characterization of GaAs/GaAs0.75Sb0.25/GaAs SQW nanowires, an emission wavelength of about 1.2 μm is achieved.

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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