Impact of the SiGe/Si interface structure upon the low temperature photoluminescence of a Si/Si1−xGex multiple quantum well

2000 ◽  
Vol 3 (5-6) ◽  
pp. 389-393
Author(s):  
T.P Sidiki ◽  
C Ferrari ◽  
S Christiansen ◽  
M Albrecht ◽  
W.B de Boer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Interface Structure ◽  
Multiple Quantum ◽  
Low Temperature Photoluminescence

scholarly journals Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature

2018 ◽  
Vol 33 (9) ◽  
pp. 094008
Author(s):  
R D Richards ◽  
T B O Rockett ◽  
M R M Nawawi ◽  
F Harun ◽  
A Mellor ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Pin Diode ◽  
Multiple Quantum

Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP

2001 ◽  
Vol 78 (21) ◽  
pp. 3199-3201 ◽  
Author(s):  
A. S. W. Lee ◽  
M. MacKenzie ◽  
D. A. Thompson ◽  
J. Bursik ◽  
B. J. Robinson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Band Gap ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Group V ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure

2000 ◽  
Vol 77 (5) ◽  
pp. 702-704 ◽  
Author(s):  
Y. F. Zhang ◽  
Q. Zhuo ◽  
M. H. Zhang ◽  
Q. Huang ◽  
J. M. Zhou
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Deep Levels ◽  
Multiple Quantum ◽  
Quantum Well Structure
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