Charge Carriers Relaxation Behavior of Cellulose Polymer Insulation Used in Oil Immersed Bushing

Cellulose insulation polymer material is widely used in oil immersed bushing. Moisture is one of the important reasons for the deterioration of cellulose polymer insulation, which seriously threatens the safe and stable operation of bushing. It is significant to study the polarization and depolarization behavior of oil-immersed cellulose polymer insulation with different moisture condition under higher voltage. Based on polarization/depolarization current method and charge difference method, the polarization/depolarization current, interfacial polarization current and electrical conductivity of cellulose polymer under different DC voltages and humidity were obtained. Based on molecular-dynamics simulation, the effect of moisture on cellulose polymer insulation was analyzed. The results show that the polarization and depolarization currents become larger with the increase in DC voltage and moisture. The higher applied voltage will accelerate the charge carrier motion. The ionization of water molecules will produce more charge carriers. Thus, high DC voltage and moisture content will increase the interface polarization current. Increased moisture content results in more charge carriers ionized by water molecules. In addition, the invasion of moisture will reduce the band width of cellulose polymer and enhance its electrostatic potential, so as to improve its overall electrical conductivity. This paper provides a reference for analyzing the polarization characteristics of charge carriers in cellulose polymer insulation.

Dynamics of Strong Coupling Between Free Charge Carriers in Organometal Halide Perovskites and Aluminum Plasmonic States

We have investigated a strong coupled system composed of a MAPbIxCl3-x perovskite film and aluminum conical nanopits array. The hybrid states formed by surface plasmons and free carriers, rather than the traditional excitons, is observed in both steady-state reflection measurements and transient absorption spectra. In particular, under near upper band resonant excitation, the bleaching signal from the band edge of uncoupled perovskite was completely separated into two distinctive bleaching signals of the hybrid system, which is clear evidence for the formation of strong coupling states between the free carrier–plasmon state. Besides this, a Rabi splitting up to 260 meV is achieved. The appearance of the lower bands can compensate for the poor absorption of the perovskite in the NIR region. Finally, we found that the lifetime of the free carrier–SP hybrid states is slightly shorter than that of uncoupled perovskite film, which can be caused by the ultrafast damping of the SPs modes. These peculiar features on the strong coupled hybrid states based on free charge carriers can open new perspectives for novel plasmonic perovskite solar cells.

Ferroelectricity Modulates Polaronic Coupling at Multiferroic Interfaces

Physics of the multiferroic interfaces is currently understood mostly within a phenomenological framework including screening of the polarization field and depolarizing charges. Largely unexplored still remains the band dependence of the interfacial charge modulation, as well as the associated changes of the electron-phonon interaction, coupling the charge and lattice degrees of freedom. Here, multiferroic heterostructures of the colossal-magnetoresistance manganite La1-xSrxMnO3 buried under ferroelectric BaTiO3 and PbZrxTi1-xO3 are explored using soft-X-ray angle-resolved photoemission. The experimental band dispersions from the buried La1-xSrxMnO3 identify coexisting two-dimensional hole and three-dimensional electron charge carriers. The ferroelectric polarization modulates their charge density, changing the band filling and orbital occupation in the interfacial region. Furthermore, these changes in the carrier density affect the coupling of the 2D holes and 3D electrons with the lattice which forms large Froelich polarons inherently reducing mobility of the charge carriers. We find that the fast dynamic response of electrons makes them much more efficient in screening of the electron-lattice interaction compared to the holes. Our k-resolved results on the orbital occupancy, band filling and electron-lattice interaction in multiferroic oxide heterostructures modulated by the ferroelectric polarization disclose most fundamental physics of these systems needed for further progress of beyond-CMOS ferro-functional electronics.

The Effect of Electric Energy Accumulation by Hydrated ZrO2 – Nanoparticles

The dimensional effect of the accumulation of an electric charge with a density of up to 270 μF/g by the system of compacted zirconium dioxide nanoparticles during exposure in an electric field (5000 V/m) under normal physical conditions is determined. Based on a qualitative complex analysis of the forms of appearance of the effect, it is shown that the place of localization of different charge carriers is the surface of nanoparticles. The supposed mechanism of this effect is considered using the theory of dispersed systems, the band theory, and the theory of contact phenomena in semiconductors. It was concluded that this mechanism is due to the phenomenon of localization of electron-type charge nanoparticles in the near-surface zone of the material in contact with the adsorption ion atmosphere. This effect is relevant for modern nanoelectronics, microsystem technology, and printed electronics.

Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

Charge properties and currents in the silicon/nanoparticles of zinc oxide heterostructure irradiated by the solar light

Silicon/zinc oxide heterostructures have shown themselves to be promising for use in photovoltaics. This paper presents the results of modeling the charge properties and currents in a Si/nanosized ZnO particle with different types of conductivity under sunlight irradiation. The simulation was carried out using the Comsol Multiphysics software package. The energy diagrams of the investigated heterostructures were plotted, the charge properties and currents flowing in the structure were investigated, the dependences of the rate of generation of charge carriers on wavelength on the surfaces of silicon, zinc oxide, and at the interface between silicon and zinc oxide, the rate of recombination of charge carriers at various wavelengths of incident radiation was obtained. The regularities of the influence of wavelength of the incident radiation on the charge density and electric potential on the surface of heterostructures have been established. It is shown that the potential on the surface of the p-Si / n-ZnO heterostructure is positive, depends on the wavelength of the incident radiation and reaches the maximum of 0.68 V. For other structures, it is negative and does not depend on the wavelength: n-Si / p-ZnO –0.78 V, p-Si / p-ZnO –0.65 V, n-Si / n-ZnO –0.25 V.

Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

Phase Segregation via Etching-Induced Cation Migration in CoSx-ZnS Nanoarchitectures for Solar Hydrogen Evolution

Low charge carrier mobility limits the development of highly efficient semiconductor-based photocatalysis. Heterointerface engineering is a promising approach to spatially separate the photoexcited charge carriers and thus enhance photocatalytic activity....