scholarly journals Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K

2013 ◽  
Author(s):  
Emmanuel Mercado ◽  
Dipendra Adhikari ◽  
Gennady A. Smolyakov ◽  
Marek Osiński
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP

2001 ◽  
Vol 78 (21) ◽  
pp. 3199-3201 ◽  
Author(s):  
A. S. W. Lee ◽  
M. MacKenzie ◽  
D. A. Thompson ◽  
J. Bursik ◽  
B. J. Robinson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Band Gap ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Group V ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Characterization of InGaN/AlGaN multiple-quantum-well laser diodes

1999 ◽  
Author(s):  
Michael Kneissl ◽  
David P. Bour ◽  
Linda T. Romano ◽  
Daniel Hofstetter ◽  
Matt D. McCluskey ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

scholarly journals Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 355-360 ◽  
Author(s):  
Stephen Bennett ◽  
Christopher M. Snowden ◽  
Stavros Iezekiel
Keyword(s):  
Nonlinear Dynamics ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Period Doubling ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Wide Range ◽  
Multiple Quantum Well Laser ◽  
Good Agreement

A theoretical (using rate equations) and experimental study of the nonlinear dynamics of a distributed feedback multiple quantum well laser diode is presented. The analysis is performed under direct modulation. Period doubling and period tripling are identified in both the measurements and simulations. Period doubling is found over a wide range of modulation frequencies in the laser. Computational results using rate equations show good agreement with the experimental results.

Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

1997 ◽  
Vol 3 (2) ◽  
pp. 315-319 ◽  
Author(s):  
N. Tessler ◽  
S. Marcinkevicius ◽  
U. Olin ◽  
C.K.V. Silfvenius ◽  
B.F. Stalnacke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
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