multiple quantum well laser
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scholarly journals Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

2021 ◽  
Vol 54 (17) ◽  
pp. 175108
Author(s):  
Alexander Afonenko ◽  
Dmitrii Ushakov ◽  
Georgy Alymov ◽  
Aleksandr Dubinov ◽  
Sergey Morozov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FJ05 ◽  
Author(s):  
Hiroyuki Taketomi ◽  
Yuta Aoki ◽  
Yasufumi Takagi ◽  
Atsushi Sugiyama ◽  
Masakazu Kuwabara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Peak Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Power Operation ◽  
Multiple Quantum Well Laser ◽  
Record Peak

Stimulated emission at 272 nm from an AlxGa1−xN-based multiple-quantum-well laser with two-step etched facets

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50245-50249 ◽  
Author(s):  
Yingdong Tian ◽  
Yun Zhang ◽  
Jianchang Yan ◽  
Xiang Chen ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Lower Threshold ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Quantum Well Laser ◽  
Cleaved Facets ◽  
Multiple Quantum Well Laser

We demonstrate an optically pumped AlGaN-based laser at 272 nm with two-step etched facets. Compared with a laser with cleaved facets, the laser with etched facets had a lower threshold and higher differential quantum efficiency.

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