Quantum mechanical forces in condensed media

Author(s):  
Barry W. Ninham ◽  
Pierandrea Lo Nostro
1994 ◽  
Vol 336 ◽  
Author(s):  
Qiming Li ◽  
R. Biswas ◽  
C.M. Soukoulis

ABSTRACTA new tight-binding molecular dynamics approach for Si-H systems is developed using the valence orbitale of Si and H for calculation of atomic forces. Previous tight-binding models are not able to describe formation energies of different charge states of H in c-Si and new physics is introduced in our model to describe both effects of charge transfer and varying atomic environments. The Si-H Model was developed by fitting to silane, and ensuring that the formation energies of different charge states of H in c-Si were correctly described. This new model also describes well vibrational properties of SiHn configurations, and the structural and electronic properties of a-Si:H Models. The new molecular dynamics utilizes quantum mechanical forces, incorporating important electronic effects, and is robust enough to simulate hundreds of atoms as would be needed in realistic a-Si:H systems.


Author(s):  
Xiang-Yang Liu ◽  
James B Adams ◽  
Furio Ercolessi ◽  
John A Moriarty

2007 ◽  
Vol 39 (3) ◽  
pp. 705-708 ◽  
Author(s):  
DeCarlos E. Taylor ◽  
V.V. Karasiev ◽  
Keith Runge ◽  
S.B. Trickey ◽  
Frank E. Harris

2003 ◽  
Vol 27 (1-2) ◽  
pp. 204-211 ◽  
Author(s):  
Carlos E. Taylor ◽  
Marshall G. Cory ◽  
Rodney J. Bartlett ◽  
Walter Thiel

1990 ◽  
Vol 160 (9) ◽  
pp. 111-154 ◽  
Author(s):  
S.V. Egerev ◽  
L.M. Lyamshev ◽  
O.V. Puchenkov
Keyword(s):  

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