Large-angle convergent-beam electron-diffraction study of coherent precipitates and decorated dislocations

Author(s):  
J.M.K. Wiezorek ◽  
H.L. Fraser

Conventional methods of convergent beam electron diffraction (CBED) use a fully converged probe focused on the specimen in the object plane resulting in the formation of a CBED pattern in the diffraction plane. Large angle CBED (LACBED) uses a converged but defocused probe resulting in the formation of ‘shadow images’ of the illuminated sample area in the diffraction plane. Hence, low-spatial resolution image information and high-angular resolution diffraction information are superimposed in LACBED patterns which enables the simultaneous observation of crystal defects and their effect on the diffraction pattern. In recent years LACBED has been used successfully for the investigation of a variety of crystal defects, such as stacking faults, interfaces and dislocations. In this paper the contrast from coherent precipitates and decorated dislocations in LACBED patterns has been investigated. Computer simulated LACBED contrast from decorated dislocations and coherent precipitates is compared with experimental observations.

1996 ◽  
Vol 11 (4) ◽  
pp. 884-894 ◽  
Author(s):  
X. J. Ning ◽  
P. Pirouz

Dislocations produced by 1300 °C indentation of the silicon-terminated (111) face of 3C-SiC were investigated by transmission electron microscopy. They were all found to be either widely separated partial dislocation pairs, or else, arrays of single partial dislocation half-loops on neighboring parallel slip planes and having the same Burgers vector. It was concluded that in the latter case, each array consisted of leading partial dislocations which had nucleated without accompanying trailing partial dislocations. The core nature of both dissociated dislocations and arrays of single partial dislocations has been determined by the technique of large angle convergent beam electron diffraction. The results indicate that the core of all single partial dislocation half-loops constituting an array consists of silicon atoms. It is concluded that, with the present deformation geometry, the Si-core partial dislocations are preferentially nucleated before the C-core partial dislocations. In the case of a dissociated dislocation, when a pair of partials was present, electron microscopy observations revealed that the morphology of the two partial dislocations was very different; while the Si-core partials were smooth, the C-core partial dislocations had a zig-zag morphology.


Author(s):  
P.A. Midgley ◽  
R. Vincent ◽  
D. Cherns

The oxygenation of YBa2Cu3O7−x (YBCO) leads to an orthorhombic distortion of the unit cell to accommodate the extra oxygen atom. This makes the formation of twins energetically favourable with CuO4 planar unit chains running alternately along the a and b axes of the parent tetragonal structure. The geometry of this twinning is such that four possible twin variants may co-exist with the twin boundaries lying in the (110) or (110) planes of the deformed structure. The traces of these planes are not mutually perpendicular and thus the crystal is strained to allow for the mismatch. It is to the nature of this strain field that this work has been addressed.Sintered samples were prepared by crushing and dispersing the resultant powder onto a very fine Cu mesh grid. Single crystals were chemically thinned to perforation. No discernible artefacts were seen and similar results were obtained with either method.


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