Characterization of crystal defects in quartz by large-angle convergent-beam electron diffraction

1995 ◽  
Vol 72 (5) ◽  
pp. 1421-1430 ◽  
Author(s):  
P. Cordier ◽  
J. P. Morniroli ◽  
D. Cherns
Keyword(s):  
Electron Diffraction ◽  
Large Angle ◽  
Convergent Beam Electron Diffraction ◽  
Crystal Defects ◽  
Beam Electron ◽  
Convergent Beam

Large-angle convergent-beam electron-diffraction study of coherent precipitates and decorated dislocations

1996 ◽  
Vol 54 ◽  
pp. 1002-1004
Author(s):  
J.M.K. Wiezorek ◽  
H.L. Fraser
Keyword(s):  
Electron Diffraction ◽  
Angular Resolution ◽  
Large Angle ◽  
Electron Diffraction Study ◽  
Convergent Beam Electron Diffraction ◽  
Crystal Defects ◽  
High Angular Resolution ◽  
Beam Electron ◽  
Diffraction Plane ◽  
Convergent Beam

Conventional methods of convergent beam electron diffraction (CBED) use a fully converged probe focused on the specimen in the object plane resulting in the formation of a CBED pattern in the diffraction plane. Large angle CBED (LACBED) uses a converged but defocused probe resulting in the formation of ‘shadow images’ of the illuminated sample area in the diffraction plane. Hence, low-spatial resolution image information and high-angular resolution diffraction information are superimposed in LACBED patterns which enables the simultaneous observation of crystal defects and their effect on the diffraction pattern. In recent years LACBED has been used successfully for the investigation of a variety of crystal defects, such as stacking faults, interfaces and dislocations. In this paper the contrast from coherent precipitates and decorated dislocations in LACBED patterns has been investigated. Computer simulated LACBED contrast from decorated dislocations and coherent precipitates is compared with experimental observations.

Applications of C-AFM and CBED Techniques to the Characterization of Substrate Dislocations Causing SRAM Soft Single-Column Failure Contained in a Wafer with (001) Plane/[100] Notch

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Tung-Hung Chen ◽  
Wen-Cheng Shu
Keyword(s):  
Electron Diffraction ◽  
Process Development ◽  
Large Angle ◽  
Convergent Beam Electron Diffraction ◽  
Fault Isolation ◽  
Beam Electron ◽  
Atomic Force ◽  
Single Column ◽  
Convergent Beam

Abstract SRAM memory is an ideal vehicle for defect monitoring and yield improvement during process development because of its highly structured architecture. However, the success rate of defect detection, especially for soft single-column failures, is decreasing when traditional physical failure analysis (PFA) with only the bitmap is available for guidance. This is due to a variety of invisible or undetectable defects that cause leakage in the device. In order to understand the leakage behavior in advanced high voltage (HV) processes, a Conductive Atomic Force Microscope (C-AFM) [1-4] is introduced to perform junction-level fault isolation prior to attempting PFA. According to J. P. Morniroli [5], crystalline defects affect convergent-beam electron diffraction (CBED) and large angle convergent-beam electron diffraction (LACBED) patterns, so CBED and LACBED techniques were also applied to the specimens containing dislocations to allow further characterization of these defects. In this study quantified data extracted using the C-AFM is also used to establish a connection between the failure mechanism discovered and the soft single column failure mode.

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