Rapid determination of formaldehyde by short-circuit argentometric amperometric titration using a rotating platinum microelectrode

1974 ◽  
Vol 46 (11) ◽  
pp. 1587-1588 ◽  
Author(s):  
Sanae. Ikeda
Keyword(s):  
Rapid Determination ◽  
Short Circuit ◽  
Amperometric Titration

Mis-identified Failures in FETs

2008 ◽  
Author(s):  
Mark Gores
Keyword(s):  
Rapid Determination ◽  
Short Circuit ◽  
Mechanical Damage ◽  
Power Supplies ◽  
Screening Methods ◽  
Power Switching ◽  
Root Cause ◽  
Switching Power ◽  
Cause Of Failure

Abstract Several recent failure analyses have found that what appeared to be typical source to drain over current damage, was actually caused by intermittently open circuited gate bonds. In power switching applications, such as inverters and switching power supplies, the timing of the transistor’s turn ons and turn offs can be critical. For example in an inverter if the transistor between the positive supply and phase A does not turn off before the transistor between the negative supply and phase A turns on there will be a short circuit between the positive and negative supplies resulting in a high current condition and the failure of both transistors. The original cause of the failure can be masked after the catastrophic failure of the die. The gate does not necessarily remain open circuited. It can reestablish continuity due to the short circuiting of the gate on the die, which causes arcing at the open bond. It is easy to overlook this mechanism in the normal FA process, since there is obvious and sometimes spectacular damage to the die and usually pressure to make a rapid determination of the root cause of failure. The gate wires are more likely to become open circuited because there is usually only 1 wire and it is sometimes a much smaller wire. The wires can become open circuited for a variety of reasons: Mechanical damage to the leads. Inadequate bonds at either end of the wire. Excessive intermetallic formation. Several case histories of open gate wires as well as other open bonds, how they were discovered, and possible screening methods will be discussed.

scholarly journals Determination of a mixture of chloride, hypochlorite, chlorite, chlorate and perchlorate ions by short-circuit amperometric titration

1973 ◽  
Vol 22 (7) ◽  
pp. 843-849 ◽  
Author(s):  
Sumio YAMASAKI ◽  
Hiroki OHURA ◽  
Issei NAKAMORI
Keyword(s):  
Short Circuit ◽  
Amperometric Titration

Weak Beam Imaging and Diffraction Studies of Stacking Faults in Silicon

1976 ◽  
Vol 34 ◽  
pp. 590-591
Author(s):  
T. Y. Tan ◽  
W. K. Tice
Keyword(s):  
Fast Neutron ◽  
Rapid Determination ◽  
Stacking Faults ◽  
Imaging Method ◽  
Large Reduction ◽  
Dislocation Loops ◽  
Fringe Spacing ◽  
Weak Beam ◽  
Kinematical Theory

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.

Methods for rapid determination of pecan (Carya illinoensis) seed viability

2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu
Keyword(s):  
Rapid Determination ◽  
Seed Viability ◽  
Carya Illinoensis

Determination of parameters of short circuit of power transformer by means of mathematical modeling

2017 ◽  
Vol 26 (102) ◽  
pp. 110-119
Author(s):  
D. S. Yarymbash, ◽  
◽  
S. T. Yarymbash, ◽  
T. E. Divchuk, ◽  
D. A. Litvinov
Keyword(s):  
Mathematical Modeling ◽  
Power Transformer ◽  
Short Circuit ◽  
Determination Of Parameters
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