α-Li2ZnGeS4: A Wide-Bandgap Diamond-like Semiconductor with Excellent Balance between Laser-Induced Damage Threshold and Second Harmonic Generation Response

2020 ◽  
Vol 32 (20) ◽  
pp. 8947-8955 ◽  
Author(s):  
Jian-Han Zhang ◽  
Daniel J. Clark ◽  
Jacilynn A. Brant ◽  
Kimberly A. Rosmus ◽  
Pedro Grima ◽  
...  
2019 ◽  
Vol 131 (24) ◽  
pp. 8171-8175 ◽  
Author(s):  
Sheng‐Ping Guo ◽  
Xiyue Cheng ◽  
Zong‐Dong Sun ◽  
Yang Chi ◽  
Bin‐Wen Liu ◽  
...  

2019 ◽  
Vol 43 (31) ◽  
pp. 12468-12474 ◽  
Author(s):  
Qichang Hu ◽  
Kaibin Ruan ◽  
Yuzhu Wang ◽  
Kai Ding ◽  
Yong Xu

A new polar sulfide, Rb2Ga2P2S9, exhibits a high laser-induced damage threshold and moderate second-harmonic-generation intensity.


Sign in / Sign up

Export Citation Format

Share Document