Modulating the Electronic Structure and In-Plane Activity of Two-Dimensional Transition Metal Dichalcogenide (MoS2, TaS2, NbS2) Monolayers by Interfacial Engineering

2020 ◽  
Vol 124 (16) ◽  
pp. 8822-8833
Author(s):  
Fuhua Li ◽  
Qing Tang
2017 ◽  
Vol 5 (43) ◽  
pp. 11233-11238 ◽  
Author(s):  
Hanyu Zhang ◽  
Jaehoon Ji ◽  
Adalberto A. Gonzalez ◽  
Jong Hyun Choi

We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors.


Nano Letters ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 5111-5118 ◽  
Author(s):  
Carmen Rubio-Verdú ◽  
Antonio M. Garcı́a-Garcı́a ◽  
Hyejin Ryu ◽  
Deung-Jang Choi ◽  
Javier Zaldı́var ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12866-12866
Author(s):  
Bhaskar Kaviraj ◽  
Dhirendra Sahoo

Retraction of ‘Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors’ by Bhaskar Kaviraj and Dhirendra Sahoo, RSC Adv., 2019, 9, 25439–25461, DOI: 10.1039/c9ra03769a.


Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Vaquero ◽  
Vito Clericò ◽  
Juan Salvador-Sanchez ◽  
Elena Díaz ◽  
Francisco Dominguez-Adame ◽  
...  

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by...


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