Na-Dependent Ultrafast Carrier Dynamics of CdS/Cu(In,Ga)Se2 Measured by Optical Pump-Terahertz Probe Spectroscopy

2015 ◽  
Vol 119 (35) ◽  
pp. 20231-20236 ◽  
Author(s):  
Woo-Jung Lee ◽  
Dae-Hyung Cho ◽  
Jae-Hyung Wi ◽  
Won Seok Han ◽  
Yong-Duck Chung ◽  
...  
2018 ◽  
Vol 57 (33) ◽  
pp. 9729 ◽  
Author(s):  
Gaofang Li ◽  
Wei Zhou ◽  
Wenjie Zhang ◽  
Guohong Ma ◽  
Haoyang Cui ◽  
...  

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Tien-Tien Yeh ◽  
Hideto Shirai ◽  
Chien-Ming Tu ◽  
Takao Fuji ◽  
Takayoshi Kobayashi ◽  
...  

1999 ◽  
Author(s):  
Arthur J. Fischer ◽  
Brian D. Little ◽  
Theodore J. Schmidt ◽  
Chan-Kyung Choi ◽  
Jin-Joo Song ◽  
...  

2012 ◽  
Vol 20 (12) ◽  
pp. 12675 ◽  
Author(s):  
Shih-Chen Chen ◽  
Yu-Kuang Liao ◽  
Hsueh-Ju Chen ◽  
Chia-Hsiang Chen ◽  
Chih-Huang Lai ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 411
Author(s):  
Chul Kang ◽  
Gyuseok Lee ◽  
Woo-Jung Lee ◽  
Dae-Hyung Cho ◽  
Inhee Maeng ◽  
...  

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime.


2017 ◽  
Vol 121 (48) ◽  
pp. 27233-27240 ◽  
Author(s):  
Sourav Maiti ◽  
Jayanta Dana ◽  
Yogesh Jadhav ◽  
Tushar Debnath ◽  
Santosh K. Haram ◽  
...  

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