Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride

ACS Nano ◽  
2021 ◽  
Author(s):  
James Callum Stewart ◽  
Ye Fan ◽  
John S. H. Danial ◽  
Alexander Goetz ◽  
Adarsh S. Prasad ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter ◽  
Emitter Localization

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

2018 ◽  
Author(s):  
Nicholas V Proscia ◽  
Zav Shoton ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Michael Dollar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

Room-temperature quantum emitter arrays in hexagonal boron nitride

2017 ◽  
Author(s):  
Nicholas V Proscia ◽  
Zav Shoton ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Marcus Doherty ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

Effect of Spectral Diffusion on the Coherence Properties of a Single Quantum Emitter in Hexagonal Boron Nitride

2020 ◽  
Vol 11 (4) ◽  
pp. 1330-1335
Author(s):  
Boris Spokoyny ◽  
Hendrik Utzat ◽  
Hyowon Moon ◽  
Gabriele Grosso ◽  
Dirk Englund ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spectral Diffusion ◽  
Single Quantum ◽  
Quantum Emitter

scholarly journals Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride

Nano Letters ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 3626-3632
Author(s):  
Chi Li ◽  
Noah Mendelson ◽  
Ritika Ritika ◽  
YongLiang Chen ◽  
Zai-Quan Xu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

Atomic localization of quantum emitters in multilayer hexagonal boron nitride

Nanoscale ◽  
2019 ◽  
Vol 11 (30) ◽  
pp. 14362-14371 ◽  
Author(s):  
Tobias Vogl ◽  
Marcus W. Doherty ◽  
Ben C. Buchler ◽  
Yuerui Lu ◽  
Ping Koy Lam
Keyword(s):  
Boron Nitride ◽  
Plasma Etching ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter ◽  
Quantum Emitters

The atomic plasma etching removes one hBN monolayer at a time. After some etching step, the quantum emitter disappears.

Deterministic Quantum Emitter Formation in Hexagonal Boron Nitride via Controlled Edge Creation

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 2121-2127 ◽  
Author(s):  
Joshua Ziegler ◽  
Rachael Klaiss ◽  
Andrew Blaikie ◽  
David Miller ◽  
Viva R. Horowitz ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

scholarly journals Rabi oscillations and resonance fluorescence from a single hexagonal boron nitride quantum emitter

Optica ◽  
2019 ◽  
Vol 6 (5) ◽  
pp. 542 ◽  
Author(s):  
Kumarasiri Konthasinghe ◽  
Chitraleema Chakraborty ◽  
Nikhil Mathur ◽  
Liangyu Qiu ◽  
Arunabh Mukherjee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Resonance Fluorescence ◽  
Rabi Oscillations ◽  
Quantum Emitter

scholarly journals Spontaneous emission mediated by graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Hong-Qian Mu ◽  
Ying Zhou ◽  
Tong-Biao Wang ◽  
De-Jian Zhang ◽  
Wenxing Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Spontaneous Emission ◽  
Sandwich Structure ◽  
Chemical Potential ◽  
Hexagonal Boron Nitride ◽  
Transition Frequency ◽  
Type I ◽  
Quantum Emitter ◽  
Superradiant State ◽  
Quantum Emitters

Abstract Controlling the spontaneous emission of atoms or molecules is an interesting research topic in the field of quantum optics. Here we provide a perspective on modulating the interaction between two quantum emitters through a sandwich structure composed of graphene and hexagonal boron nitride (hBN). The dependence of interaction between quantum emitters on the thickness of hBN and chemical potential of graphene is investigated in detail. When the transition frequency of quantum emitter is located in the hyperbolic band of type I supported by hBN, the radiative state can be easily modulated by adjusting the chemical potential of graphene. So it is flexible to switch the interaction of quantum emitters from superradiant state to subradiant state by external electric field. When the transition frequency of quantum emitter is located in hyperbolic band of type II, the system can be always in the superradiant state. We predict the further research perspectives of spontaneous emission and superradiance with the help of metasurfaces based on two-dimensional materials.

scholarly journals Stone–Wales defects in hexagonal boron nitride as ultraviolet emitters

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Hanen Hamdi ◽  
Gergő Thiering ◽  
Zoltán Bodrog ◽  
Viktor Ivády ◽  
Adam Gali
Keyword(s):  
Boron Nitride ◽  
First Principles ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Density Functional Theory Calculations ◽  
Ultraviolet Region ◽  
Functional Theory ◽  
Quantum Emitter ◽  
Wales Defect ◽  
Line Defects

AbstractMany quantum emitters have been measured close or near the grain boundaries of the two-dimensional hexagonal boron nitride where various Stone–Wales defects appear. We show by means of first principles density functional theory calculations that the pentagon–heptagon Stone–Wales defect is an ultraviolet emitter and its optical properties closely follow the characteristics of a 4.08-eV quantum emitter, often observed in polycrystalline hexagonal boron nitride. We also show that the square–octagon Stone–Wales line defects are optically active in the ultraviolet region with varying gaps depending on their density in hexagonal boron nitride. Our results may introduce a paradigm shift in the identification of fluorescent centres in this material.

Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride

2022 ◽  
Author(s):  
Hongwei Liu ◽  
Noah Mendelson ◽  
Irfan H. Abidi ◽  
Shaobo Li ◽  
Zhenjing Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Carbon Doped ◽  
Quantum Emitter ◽  
Rational Control
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