scholarly journals Spontaneous emission mediated by graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Hong-Qian Mu ◽  
Ying Zhou ◽  
Tong-Biao Wang ◽  
De-Jian Zhang ◽  
Wenxing Liu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Spontaneous Emission ◽  
Sandwich Structure ◽  
Chemical Potential ◽  
Hexagonal Boron Nitride ◽  
Transition Frequency ◽  
Type I ◽  
Quantum Emitter ◽  
Superradiant State ◽  
Quantum Emitters

Abstract Controlling the spontaneous emission of atoms or molecules is an interesting research topic in the field of quantum optics. Here we provide a perspective on modulating the interaction between two quantum emitters through a sandwich structure composed of graphene and hexagonal boron nitride (hBN). The dependence of interaction between quantum emitters on the thickness of hBN and chemical potential of graphene is investigated in detail. When the transition frequency of quantum emitter is located in the hyperbolic band of type I supported by hBN, the radiative state can be easily modulated by adjusting the chemical potential of graphene. So it is flexible to switch the interaction of quantum emitters from superradiant state to subradiant state by external electric field. When the transition frequency of quantum emitter is located in hyperbolic band of type II, the system can be always in the superradiant state. We predict the further research perspectives of spontaneous emission and superradiance with the help of metasurfaces based on two-dimensional materials.

Atomic localization of quantum emitters in multilayer hexagonal boron nitride

Nanoscale ◽  
2019 ◽  
Vol 11 (30) ◽  
pp. 14362-14371 ◽  
Author(s):  
Tobias Vogl ◽  
Marcus W. Doherty ◽  
Ben C. Buchler ◽  
Yuerui Lu ◽  
Ping Koy Lam
Keyword(s):  
Boron Nitride ◽  
Plasma Etching ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter ◽  
Quantum Emitters

The atomic plasma etching removes one hBN monolayer at a time. After some etching step, the quantum emitter disappears.

scholarly journals Bottom‐Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity‐Stabilized Quantum Emitters

Small ◽  
2021 ◽  
pp. 2008062
Author(s):  
Yongliang Chen ◽  
Xiaoxue Xu ◽  
Chi Li ◽  
Avi Bendavid ◽  
Mika T. Westerhausen ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bottom Up ◽  
Boron Nitride Nanoparticles ◽  
Quantum Emitters

Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride

2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Density ◽  
High Quality ◽  
Quantum Emitters

First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Yiheng Chen ◽  
Wen-Ti Guo ◽  
Zi-si Chen ◽  
Suyun Wang ◽  
Jian-Min Zhang
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Charge Density ◽  
First Principles ◽  
Sandwich Structure ◽  
Hexagonal Boron Nitride ◽  
Mulliken Population ◽  
Metal Insulator ◽  
Insulator Phase Transition ◽  
Twisted Graphene

Abstract In recent years, the discovery of "magic angle" graphene has given new inspiration to the formation of heterojunctions. Similarly, the use of hexagonal boron nitride, known as white graphene, as a substrate for graphene devices has more aroused great interest in the graphene/hexagonal boron nitride (G/hBN) heterostructure system. Based on the first principles method of density functional theory, the band structure, density of states, Mulliken population, and differential charge density of a tightly packed model of twisted graphene/hexagonal boron nitride/graphene (G/hBN/G) sandwich structure have been studied. Through the establishment of heterostructure models TBG inserting hBN with different twisted angles, it was found that the band gap, Mulliken population, and charge density, exhibited specific evolution regulars with the rotation angle of the upper graphene, showing novel electronic properties and realizing metal-insulator phase transition. We find that the particular value of the twist angle at which the metal-insulator phase transition occurs and propose a rotational regulation mechanism with angular periodicity. Our results have guiding significance for the practical application of heterojunction electronic devices.

scholarly journals Strain induced coupling and quantum information processing with hexagonal boron nitride quantum emitters

2021 ◽  
Author(s):  
Fatemeh Tarighitabesh ◽  
Qaem Hassanzada ◽  
Mohammad Hadian ◽  
Arsalan Hashemi ◽  
Abdolhosseini Sarsari ◽  
...  
Keyword(s):  
Information Processing ◽  
Quantum Information ◽  
Boron Nitride ◽  
Quantum Information Processing ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitters

Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature

2018 ◽  
Author(s):  
Nicholas V Proscia ◽  
Zav Shoton ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Michael Dollar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter

Room-temperature quantum emitter arrays in hexagonal boron nitride

2017 ◽  
Author(s):  
Nicholas V Proscia ◽  
Zav Shoton ◽  
Harishankar Jayakumar ◽  
Prithvi Reddy ◽  
Marcus Doherty ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitter
Sign in / Sign up

Export Citation Format

Share Document