Competitive effect between roughness and mask pattern on charging phenomena during plasma etching

In plasma etching process, the edge roughness and mask pattern usually play a significant role in the deformation of holes under the influence of charging effect. The competitive effect between these two factors has been investigated, focusing on the surface charging in a hexagonal array, with various values of roughness parameters (amplitude (A) and wavelength (W)) and distances between holes (L). A series of classical particle dynamic simulations of surface charging, surface etching and profile evolution were used to investigate the effect of roughness and pattern on charging. This study showed that various roughness and patterns (represented by different values of L) can significantly influence surface distributions of the electric-field (E-field) and the etching rates on the mask surface. The simulations also showed that (1) the shape of the pattern array influences the mask hole profile during etching process, i.e. a hexagonal array pattern tends to deform the profile of a circular mask hole into a hexagonal hole; (2) pattern roughness is aggravated during etching process. These factors were found to be significant only at a small feature pitch and may be ignored at a large feature pitch. Possible mechanisms of these results during etching process are discussed. This work sheds light on the ways to maintain pattern integrity and further improve the quality of the pattern transfer onto the substrate.

Investigation of thin films for fabrication of Nb/AlN/NbN tunnel junctions and microstrip lines of NbTiN-SiO2-Al.

The surface of thin films of Nb, Al, NbTiN, SiO2, Al2O3 is investigated in this work. These films are necessary for the fabrication of high-sensitive devices of THz range. The fabrication processes of such devices are described briefly. All films were fabricated using a Kurt J. Lesker magnetron sputtering system. The study of the film surface roughness was carried out using a Bruker Ikon atomic force microscope. The surface quality of films is determined not only deposition mode, but plasma etching process also. The best values of the root-mean-square deviation of the surface profile Rq = 2 nm were obtained for the used NbTiN film with a thickness of 325 nm. Thin Al-layers that is used for tunnel barrier formation is studied. It is shown than Al films with a thickness of more than 6 nm are already continuous. The surface roughness of the single-layer and multilayer films has been studied.

Modifications of Parylene by Microstructures and Selenium Nanoparticles: Evaluation of Bacterial and Mesenchymal Stem Cell Viability

Parylene-based implants or coatings introduce surfaces suffering from bacteria colonization. Here, we synthesized polyvinylpyrrolidone-stabilized selenium nanoparticles (SeNPs) as the antibacterial agent, and various approaches are studied for their reproducible adsorption, and thus the modification of parylene-C–coated glass substrate. The nanoparticle deposition process is optimized in the nanoparticle concentration to obtain evenly distributed NPs on the flat parylene-C surface. Moreover, the array of parylene-C micropillars is fabricated by the plasma etching of parylene-C on a silicon wafer, and the surface is modified with SeNPs. All designed surfaces are tested against two bacterial pathogens, Escherichia coli (Gram-negative) and Staphylococcus aureus (Gram-positive). The results show no antibacterial effect toward S. aureus, while some bacteriostatic effect is observed for E. coli on the flat and microstructured parylene. However, SeNPs did not enhance the antibacterial effect against both bacteria. Additionally, all designed surfaces show cytotoxic effects toward mesenchymal stem cells at high SeNP deposition. These results provide valuable information about the potential antibacterial treatment of widely used parylene-C in biomedicine.

Single-layered assembly of vanadium pentoxide nanowires on graphene for nanowire-based lithography technique

Graphene nanoribbon (GNR)-based materials are a promising device material because of their potential high carrier mobility and atomically thin structure. Various approaches have been reported for preparing the GNR-based materials, from bottom-up chemical synthetic procedures to top-down fabrication techniques using lithography of graphene. However, it is still difficult to prepare a large-scale GNR-based material. Here, we develop a procedure to prepare a large-scale GNR network using networked single-layer inorganic nanowires. Vanadium pentoxide (V2O5) nanowires were assembled on graphene with an interfacial layer of a cationic polymer via the electrostatic interaction. A large-scale nanowire network can be prepared on graphene and is stable enough for applying an oxygen plasma. Using plasma etching, a networked graphene structure can be generated. Removing the nanowires results in a networked flat structure whose both surface morphology and Raman spectrum indicate a GNR networked structure. The field-effect device indicates the semiconducting character of the GNR networked structure. This work would be useful for fabricating a large-scale GNR-based material as a platform for GNR junctions for physics and electronic circuits.