scholarly journals Liquid/Liquid Interfacial Polymerization To Grow Single Crystalline Nanoneedles of Various Conducting Polymers

ACS Nano ◽  
2008 ◽  
Vol 2 (3) ◽  
pp. 502-506 ◽  
Author(s):  
Nurxat Nuraje ◽  
Kai Su ◽  
Nan-loh Yang ◽  
Hiroshi Matsui
Author(s):  
Joseph D. C. Peng

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.


Author(s):  
J. Fink

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.


1985 ◽  
Vol 46 (9) ◽  
pp. 1595-1601 ◽  
Author(s):  
F. Devreux ◽  
G. Bidan ◽  
A.A. Syed ◽  
C. Tsintavis

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-567-C3-572 ◽  
Author(s):  
F. Bénière ◽  
D. Boils ◽  
H. Cánepa ◽  
J. Franco ◽  
A. Le Corre ◽  
...  

1982 ◽  
Vol 136 (3) ◽  
pp. 535
Author(s):  
S.A. Brazovskii
Keyword(s):  

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  

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