One electron reduction transforms high-valent low-spin cobalt alkylidene into high-spin cobalt(ii) carbene radical

2020 ◽  
Vol 56 (60) ◽  
pp. 8416-8419
Author(s):  
Amanda Grass ◽  
James A. Bellow ◽  
Gregory Morrison ◽  
Hans-Conrad zur Loye ◽  
Richard L. Lord ◽  
...  

Synthesis, electronic structure, and reactivity of a novel Co(ii) carbene radical in the bis(alkoxide) ligand environment are reported.


1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.





2019 ◽  
Vol 25 (54) ◽  
pp. 12491-12496 ◽  
Author(s):  
Quan Manh Phung ◽  
Kristine Pierloot


2019 ◽  
Vol 58 (2) ◽  
pp. 1252-1266 ◽  
Author(s):  
Brett M. Hakey ◽  
Jonathan M. Darmon ◽  
Yu Zhang ◽  
Jeffrey L. Petersen ◽  
Carsten Milsmann


1999 ◽  
Vol 111 (22) ◽  
pp. 10148-10158 ◽  
Author(s):  
Lawrence L. Lohr ◽  
Jeremy C. Miller ◽  
Robert R. Sharp


2002 ◽  
Vol 124 (12) ◽  
pp. 3012-3025 ◽  
Author(s):  
Hanspeter Andres ◽  
Emile L. Bominaar ◽  
Jeremy M. Smith ◽  
Nathan A. Eckert ◽  
Patrick L. Holland ◽  
...  






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