Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
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The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.
2019 ◽
Vol 1389
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pp. 012048
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2013 ◽
Vol 48
(20)
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pp. 2427-2439
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2018 ◽
Vol 114
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pp. 133-146
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2006 ◽
Vol 132
(12)
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pp. 1354-1362
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