Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy

2002 ◽  
Vol 92 (3) ◽  
pp. 1307-1316 ◽  
Author(s):  
V. Wagner ◽  
O. Parillaud ◽  
H. J. Bühlmann ◽  
M. Ilegems ◽  
S. Gradecak ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Luminescence Properties ◽  
Gas Composition ◽  
Carrier Gas

Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas inm-plane GaN Regrowth by Hydride Vapor Phase Epitaxy

2013 ◽  
Vol 6 (11) ◽  
pp. 115502 ◽  
Author(s):  
Benjamin N. Bryant ◽  
Erin C. Young ◽  
Feng Wu ◽  
Kenji Fujito ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Basal Plane ◽  
Vapor Phase Epitaxy ◽  
Stacking Fault ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas

Carrier Gas Dependence at Initial Processes fora-Plane AlN Growth onr-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 50 (5R) ◽  
pp. 055501 ◽  
Author(s):  
Jumpei Tajima ◽  
Chikashi Echizen ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas ◽  
Sapphire Substrates

Carrier Gas Dependence at Initial Processes fora-Plane AlN Growth onr-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 50 (5) ◽  
pp. 055501 ◽  
Author(s):  
Jumpei Tajima ◽  
Chikashi Echizen ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas ◽  
Sapphire Substrates

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2

2002 ◽  
Vol 41 (Part 1, No. 1) ◽  
pp. 75-76 ◽  
Author(s):  
Shinya Bohyama ◽  
Kenji Yoshikawa ◽  
Hiroyuki Naoi ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocations ◽  
Carrier Gas ◽  
Lateral Overgrowth

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

2015 ◽  
Vol 252 (5) ◽  
pp. 1180-1188 ◽  
Author(s):  
E. Gridneva ◽  
E. Richter ◽  
M. Feneberg ◽  
M. Weyers ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas

The growth mechanism of GaN grown by hydride vapor phase epitaxy in N2 and H2 carrier gas

2004 ◽  
Vol 260 (1-2) ◽  
pp. 79-84 ◽  
Author(s):  
Hai-Ping Liu ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
Jung Tsung Hsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Mechanism ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Carrier Gas
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