vapor phase epitaxy
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AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015203
Author(s):  
Masataka Imura ◽  
Hideki Inaba ◽  
Takaaki Mano ◽  
Nobuyuki Ishida ◽  
Fumihiko Uesugi ◽  
...  

2022 ◽  
pp. 126520
Author(s):  
Kazutada Ikenaga ◽  
Nami Tanaka ◽  
Taro Nishimura ◽  
Hirotaka Iino ◽  
Ken Goto ◽  
...  

Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.


Solar RRL ◽  
2021 ◽  
Author(s):  
Yasushi Shoji ◽  
Ryuji Oshima ◽  
Kikuo Makita ◽  
Akinori Ubukata ◽  
Takeyoshi Sugaya

2021 ◽  
Author(s):  
Aslan Turkoglu ◽  
Yüksel Ergun

Abstract In this study, the photoluminescence measurements of GaAs/AlGaAs multi-quantum-wells heterojunction structure grown on n+-GaAs substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) method are investigated. By dropping 5145 Å wavelength laser light on the sample at room temperature and low temperatures, the transitions between the bands in the structure and the changes in these transitions under the different electric fields and temperatures are observed. In addition, by making theoretically developed self-consistent potential calculations, the subband energy levels and their corresponding wave functions of the structure under the electric field and without the electric field are calculated. The obtained numerical results were found to be in full agreement with the experimental measurements and theoretical calculations.


2021 ◽  
Vol 119 (20) ◽  
pp. 209901
Author(s):  
Kazuki Ohnishi ◽  
Seiya Kawasaki ◽  
Naoki Fujimoto ◽  
Shugo Nitta ◽  
Hirotaka Watanabe ◽  
...  

ACS Omega ◽  
2021 ◽  
Author(s):  
Oliver Maßmeyer ◽  
Johannes Haust ◽  
Thilo Hepp ◽  
Robin Günkel ◽  
Johannes Glowatzki ◽  
...  

2021 ◽  
Vol 119 (15) ◽  
pp. 152102
Author(s):  
Kazuki Ohnishi ◽  
Seiya Kawasaki ◽  
Naoki Fujimoto ◽  
Shugo Nitta ◽  
Hirotaka Watanabe ◽  
...  

APL Materials ◽  
2021 ◽  
Vol 9 (10) ◽  
pp. 101108
Author(s):  
Jinho Bae ◽  
Ji-Hyeon Park ◽  
Dae-Woo Jeon ◽  
Jihyun Kim

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