hydride vapor phase epitaxy
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Author(s):  
Osamu Ueda ◽  
Makoto Kasu ◽  
Hirotaka Yamaguchi

Abstract This paper reviews the status of characterization of defects in β-Ga2O3 crystals grown by edge-defined film-fed growth and hydride vapor phase epitaxy using chemical etching, scanning electron microscopy, focused ion beam scanning ion microscopy, X-ray topography (XRT), and transmission electron microscopy (TEM). The observed defects are classified into four types: dislocations, stacking faults (SFs), twins, and plate-like nanovoids (PNVs). First, we present the detailed characterization of dislocations in the crystal by chemical etching, XRT, and TEM, and discuss possible slip systems. Next, we describe XRT analyses of two types of SFs: SFs 1 lying on the (2 ̅01) plane and SFs 2 on the (111) and (11 ̅1) planes. We describe the results for twins found in crystals via high-resolution TEM and electron diffraction analysis, and PNVs corresponding to etch pits on the (010) plane. Finally, we discuss possible generation mechanisms of the defects and their influence on device characteristics.


2022 ◽  
Vol 64 (1) ◽  
pp. 117
Author(s):  
А.А. Корякин ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Ш.Ш. Шарофидинов

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.


Solar RRL ◽  
2021 ◽  
Author(s):  
Yasushi Shoji ◽  
Ryuji Oshima ◽  
Kikuo Makita ◽  
Akinori Ubukata ◽  
Takeyoshi Sugaya

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1153
Author(s):  
Qian Zhang ◽  
Xu Li ◽  
Jianyun Zhao ◽  
Zhifei Sun ◽  
Yong Lu ◽  
...  

We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at 1300 °C are favorable for the formation of single (10–13) AlN film. Furthermore, the compressive stress of the (10–13) single-oriented AlN film is smaller than polycrystalline samples which have the low-temperature nitridation layer and buffer layer. On the one hand, the improvement of (10–13) AlN crystalline quality is possibly due to the high-temperature nitridation that promotes the coalescence of crystal grains. On the other hand, as the temperature of nitridation and buffer layer increases, the contents of N-Al-O and Al-O bonds in the AlN film are significantly reduced, resulting in an increase in the proportion of Al-N bonds.


2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.


2021 ◽  
Vol 119 (9) ◽  
pp. 092101
Author(s):  
Kevin L. Schulte ◽  
David R. Diercks ◽  
Harvey L. Guthrey ◽  
Matthew R. Young ◽  
Corinne E. Packard ◽  
...  

Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 142-148
Author(s):  
Yasushi Shoji ◽  
Ryuji Ohisma ◽  
Kikuo Makita ◽  
Akinori Ubukata ◽  
Takeyoshi Sugaya

Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  

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