Internal‐Friction Study of High‐Purity Single Crystals ofnEicosane (C20H42)

1971 ◽  
Vol 42 (12) ◽  
pp. 4636-4644 ◽  
Author(s):  
J. M. Crissman ◽  
E. Passaglia
2015 ◽  
Vol 363 ◽  
pp. 106-111
Author(s):  
Shigeru Suzuki ◽  
Alfred Seeger

Dislocation-induced relaxations in different molybdenum single crystals were investigated by means of low-frequency internal friction measurements in the temperature range of 20–600 K. The results indicated that the appearance of the dislocation-induced relaxations strongly depends on the purity of the molybdenum, although the intrinsic dislocation relaxations appeared at about 100 K and 450 K in the high-purity molybdenum. The molybdenum containing a small amount of carbon did not exhibit the intrinsic dislocation relaxations but rather revealed a modulus increase due to the dislocation pinning caused by the dissolved carbon. When the molybdenum containing a small amount of carbon was annealed up to 700 K, a new relaxation peak appeared at about 450 K. The activation process for this relaxation indicated that it could be attributed to the relaxation due to a carbon-dislocation interaction. In addition, it was shown that the dislocation-induced relaxations in medium-purity molybdenum were small, which was attributed to the residual substitutional impurities in the molybdenum.


1983 ◽  
Vol 17 (6) ◽  
pp. 759-763 ◽  
Author(s):  
O. Yoshinari ◽  
M. Koiwa ◽  
M. Isshiki ◽  
K. Igaki

1981 ◽  
Vol 42 (C5) ◽  
pp. C5-55-C5-60
Author(s):  
H. J. Kaufmann ◽  
P. P. Pal-Val ◽  
D. Schulze ◽  
V. I. Startsev

1998 ◽  
Vol 552 ◽  
Author(s):  
M. Hirscher ◽  
D. Schaible

ABSTRACTHigh-purity stoichiometric NiAl single crystals have been prepared by crucible-free inductive zone melting and afterwards well annealed at temperatures below 1200 K. Internal friction measurements of torsionally deformed single crystals show two relaxation maxima at 500 and 800 K which anneal during the measurement. The first maximum can be assigned to the dislocation motion by kinkpair formation and the annealing to pinning of these dislocations by interstitial impurity atoms. The second maximum is attributed to the Snoek-Köster relaxation of dislocations in the presence of mobile interstitial impurity atoms and the annealing to the pinning of dislocations by vacancies. The kink-pair formation enthalpy in NiAl was estimated.


1984 ◽  
Vol 84 (1) ◽  
pp. 157-164 ◽  
Author(s):  
T. S. Kě ◽  
P. Cui ◽  
C. M. Su

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