Andreev reflection and incoherent spin-polarized transport in ferromagnetic semiconductor/d-wave superconductor/ferromagnetic semiconductor tunnel junctions with {110} interfaces

2010 ◽  
Vol 107 (9) ◽  
pp. 093708
Author(s):  
Y. C. Tao ◽  
H. Liu ◽  
J. G. Hu
Keyword(s):  
Andreev Reflection ◽  
Tunnel Junctions ◽  
Ferromagnetic Semiconductor ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport ◽  
D Wave

A two-band model of spin-polarized transport in Fe/Cr/MgO/Fe magnetic tunnel junctions

2010 ◽  
Vol 107 (9) ◽  
pp. 09C720 ◽  
Author(s):  
A. Vedyaev ◽  
N. Ryzhanova ◽  
N. Strelkov ◽  
M. Chshiev ◽  
B. Dieny
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Band Model ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport ◽  
Two Band Model

Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs

2017 ◽  
Vol 19 (27) ◽  
pp. 17765-17772 ◽  
Author(s):  
Shweta Meena ◽  
Sudhanshu Choudhary
Keyword(s):  
Graphene Sheet ◽  
First Principles ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Half Metallic ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Polarized Transport ◽  
Spin Polarized Transport

First principles investigations are performed to understand the spin-polarized transport in Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier in between two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes.

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