Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures

Journal of Applied Physics ◽

10.1063/1.347542 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7697-7702 ◽

Author(s):

Michio Sato ◽

Yoshiji Horikoshi

Keyword(s):

Energy Gaps ◽

Layer Structures

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GaAsN Alloys and GaN/GaAs Thin-Layer Structures

10.1201/9781003211082-7 ◽

2021 ◽

pp. 201-231

Author(s):

Michio Sato

Keyword(s):

Layer Structures

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Spectral Domain Techniques for the Fast and Accurate Solution of Larger Microwave and Thin Layer Structures

Frequenz ◽

10.1515/freq.2009.63.7-8.134 ◽

2009 ◽

Vol 63 (7-8) ◽

Author(s):

Thomas Vaupel

Keyword(s):

Accurate Solution ◽

Spectral Domain ◽

Layer Structures

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Synthesis of thin-layer structures by the ionic layer deposition method

Russian Chemical Reviews ◽

10.1070/rc1993v062n03abeh000015 ◽

1993 ◽

Vol 62 (3) ◽

pp. 237-242 ◽

Author(s):

Valeri P Tolstoi

Keyword(s):

Deposition Method ◽

Layer Deposition ◽

Layer Structures ◽

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Analysis of Thin-Layer Structures by X-Ray Reflectometry

Handbook of Silicon Semiconductor Metrology ◽

10.1201/9780203904541.ch27 ◽

2001 ◽

Author(s):

Richard Deslattes ◽

Richard Matyi

Keyword(s):

X Ray ◽

Layer Structures

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Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals

10.7567/ssdm.1994.s-i-1-3 ◽

1994 ◽

Author(s):

Michio SATO

Keyword(s):

Mocvd Growth ◽

Layer Structures

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Investigation of charge carrier mobility and recombination in PBDTTPD thin layer structures

Organic Electronics ◽

10.1016/j.orgel.2021.106066 ◽

2021 ◽

Vol 90 ◽

pp. 106066

Author(s):

Andrius Aukštuolis ◽

Nerijus Nekrašas ◽

Kristijonas Genevičius ◽

Giedrius Juška

Keyword(s):

Charge Carrier ◽

Carrier Mobility ◽

Charge Carrier Mobility ◽

Layer Structures

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Frustrated total internal reflection from thin-layer structures with a metal film

Optics and Spectroscopy ◽

10.1134/s0030400x0905021x ◽

2009 ◽

Vol 106 (5) ◽

pp. 748-752 ◽

Author(s):

N. D. Goldina

Keyword(s):

Total Internal Reflection ◽

Internal Reflection ◽

Frustrated Total Internal Reflection ◽

Layer Structures

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Analysis of Thin-Layer Structures by X-Ray Reflectometry

Handbook of Silicon Semiconductor Metrology ◽

10.1201/9780203904541-34 ◽

2001 ◽

pp. 639-654

Keyword(s):

X Ray ◽

Layer Structures

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Shallow angle lapping of III‐V semiconductor thin layer structures by an ion beam/chemical etching technique

Applied Physics Letters ◽

10.1063/1.109828 ◽

1993 ◽

Vol 63 (8) ◽

pp. 1041-1043

Author(s):

D. W. Eckart ◽

L. M. Casas

Keyword(s):

Chemical Etching ◽

Ion Beam ◽

Etching Technique ◽

Layer Structures

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Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings ◽

10.1109/smicnd.1996.557389 ◽

2002 ◽

Author(s):

V.V. Bivol ◽

G.M. Triduh ◽

E.A. Akimova ◽

D.I. Tsiulyanu

Keyword(s):

Chalcogenide Glass ◽

Chemical Processes ◽

Layer Structures

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