Effect of Co and Cr substitution on low-temperature resistivity minimum of amorphous Fe75Si15B10

1992 ◽  
Author(s):  
G. Venugopal Rao ◽  
Anil K. Bhatnagar
2015 ◽  
Vol 11 (3) ◽  
pp. 3184-3189 ◽  
Author(s):  
Proloy T. Das

The low-temperature electronic transport behavior of under doped polycrystalline Pr0.8Sr0.2MnO3 (PSMO) manganitenanoparticles (down to 40 nm), have been investigated in the presence of applied external magnetic fields (Hext) and adistinct resistivity minimum (ρmin) is observed below 50 K for each PSMO sample. It has been found that both depth of ρmin,and temperature of resistivity minima (min T ) values enhance with increase of Hext. Considering various possibilities likeCoulomb blockade theory, electron-electron interaction, phase separation, Kondo mechanism, we conclude thatoccurrence of low temperature resistivity anomalies (<min T ) in PSMO manganite system is presumably due to acombined effect of electron-electron interaction (~T1/2) and 3D weak localization (WL) mechanism. The proposed modelcan explain spin dependent scattering phenomena in disorder background of correlated manganite system and behaviorof various fit parameters responsible for low temperature resistivity anomalies under external magnetic fields.


Sign in / Sign up

Export Citation Format

Share Document