Low temperature resistivity anomalies in Pr-based nano-manganites

2015 ◽  
Vol 11 (3) ◽  
pp. 3184-3189 ◽  
Author(s):  
Proloy T. Das
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Electronic Transport ◽  
Weak Localization ◽  
Electron Interaction ◽  
Resistivity Minimum ◽  
Spin Dependent Scattering ◽  
T Values ◽  
Temperature Resistivity ◽  
Interaction Phase

The low-temperature electronic transport behavior of under doped polycrystalline Pr0.8Sr0.2MnO3 (PSMO) manganitenanoparticles (down to 40 nm), have been investigated in the presence of applied external magnetic fields (Hext) and adistinct resistivity minimum (ρmin) is observed below 50 K for each PSMO sample. It has been found that both depth of ρmin,and temperature of resistivity minima (min T ) values enhance with increase of Hext. Considering various possibilities likeCoulomb blockade theory, electron-electron interaction, phase separation, Kondo mechanism, we conclude thatoccurrence of low temperature resistivity anomalies (<min T ) in PSMO manganite system is presumably due to acombined effect of electron-electron interaction (~T1/2) and 3D weak localization (WL) mechanism. The proposed modelcan explain spin dependent scattering phenomena in disorder background of correlated manganite system and behaviorof various fit parameters responsible for low temperature resistivity anomalies under external magnetic fields.

Low-temperature resistivity of YbCu5-xAuxunder magnetic fields

2001 ◽  
Vol 13 (15) ◽  
pp. 3623-3632 ◽  
Author(s):  
N Tsujii ◽  
T Terashima ◽  
C Terakura ◽  
G Kido ◽  
T Kawabata ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Temperature Resistivity

Low-Temperature Resistivity of UBe 13 in High Magnetic Fields

1986 ◽  
Vol 1 (2) ◽  
pp. 71-76 ◽  
Author(s):  
U Rauchschwalbe ◽  
F Steglich ◽  
H Rietschel
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
High Magnetic Fields ◽  
Temperature Resistivity

Low-temperature electronic transport in single K0.27MnO2·0.5H2O nanowires: enhanced electron–electron interaction

2008 ◽  
Vol 19 (21) ◽  
pp. 215708 ◽  
Author(s):  
Y Z Long ◽  
Z H Yin ◽  
Z J Chen ◽  
A Z Jin ◽  
C Z Gu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electronic Transport ◽  
Electron Interaction

Influence of the interface in quantum corrections on the low-temperature resistance of La2/3Sr1/3MnO3 trilayer masking thin films

2015 ◽  
Vol 17 (19) ◽  
pp. 12826-12832 ◽  
Author(s):  
Yuan Jin ◽  
Xiao-Peng Cui ◽  
Wei-Hua Han ◽  
Shi-Xun Cao ◽  
Yu-Ze Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Quantum Correction ◽  
Weak Localization ◽  
Quantum Corrections ◽  
Electron Interaction ◽  
Strongly Correlated ◽  
Temperature Resistance ◽  
Low Temperature Resistance

We report the low temperature resistance upturn is mainly due to the quantum correction effects driven by the weak localization and the electron–electron interaction in such a strongly correlated system, and the contribution of each factor varies with grain boundaries.

Quantum correction to low-temperature resistivity induced by disorder in La2/3Sr1/3MnO3–ZrO2 matrix composites

RSC Advances ◽  
2015 ◽  
Vol 5 (3) ◽  
pp. 2354-2359 ◽  
Author(s):  
Yuan Jin ◽  
Xiao-Long Qian ◽  
Bo Lu ◽  
Shi-Xun Cao ◽  
Jin-Cang Zhang
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Quantum Correction ◽  
Matrix Composites ◽  
Temperature Resistivity

Low-temperature transport properties were systemically studied for a series of (1 − x) La2/3Sr1/3MnO3 + xZrO2 (x = 0%, 3%, 6%, and 9%) matrix composites under low applied magnetic fields.

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