Electrical resistivity of Al-Cu liquid binary alloy

2013 ◽  
Author(s):  
P. P. Thakor ◽  
J. J. Patel ◽  
Y. A. Sonvane ◽  
A. R. Jani
2013 ◽  
Vol 209 ◽  
pp. 233-236 ◽  
Author(s):  
Pankajsinh B. Thakor ◽  
J.J. Patel ◽  
Yogeshkumar A. Sonvane ◽  
P.N. Gajjar ◽  
Ashvin R. Jani

Present paper dealswith the calculation of electrical resistivity (ρ) of Ni-Cr liquid binary alloy using Faber-Ziman formulation. Todescribe electron-ion interaction we have used newly constructed parametricfree model potential along with Ashcroft-Langreth (AL) partial structurefactor. To see the influence of exchangeand correlation effect, Hartree, Taylor and Sarkaret allocal field correlation functions are used. From presentresults, it is seen that good agreements between present results andexperimental data have been achieved. Lastly we conclude that our model potential successfully produces thedata of electrical resistivity (ρ) ofNi-Cr liquid binary alloy.


2013 ◽  
Vol 665 ◽  
pp. 132-135 ◽  
Author(s):  
Pankajsinh B. Thakor ◽  
Yogeshkumar A. Sonvane ◽  
J.J. Patel ◽  
Ashvin R. Jani

Electronic transport property like electrical resistivity (ρ) of Co-Cr liquid binary alloy is calculated using Faber-Ziman formulation. To describe electron-ion interaction we have used newly constructed parametric free model potential along with Ashcroft-Langreth (AL) partial structure factor. To see the effect of exchange and correlation effect on electrical resistivity, we have used different local field correction functions like Hartree, Taylor and Sarkar et al. From present results, it is seen that good agreements between present results and experimental data have been achieved. Lastly we conclude that our model potential successfully produces the data of electrical resistivity (ρ) of Co-Cr liquid binary alloy.


Ultrasonics ◽  
2015 ◽  
Vol 55 ◽  
pp. 6-9 ◽  
Author(s):  
Xuan Liu ◽  
Jianfeng Zhang ◽  
Haoyu Li ◽  
Qichi Le ◽  
Zhiqiang Zhang ◽  
...  

2012 ◽  
Vol 152 (7) ◽  
pp. 573-576 ◽  
Author(s):  
L. Liu ◽  
T.H. Wang ◽  
J.C. Li ◽  
Q. Jiang

1983 ◽  
Vol 12 (2) ◽  
pp. 183-322 ◽  
Author(s):  
C. Y. Ho ◽  
M. W. Ackerman ◽  
K. Y. Wu ◽  
T. N. Havill ◽  
R. H. Bogaard ◽  
...  

2003 ◽  
Vol 793 ◽  
Author(s):  
Min Wook Oh ◽  
Jia-Jun Gu ◽  
Kosuke Kuwabara ◽  
Haruyuki Inui

ABSTRACTS:The thermoelectric properties as well as microstructure of binary and some ternary ReSi1.75 have been investigated. Binary ReSi1.75 exhibits a nice thermoelectric property as exemplified by the high value of dimensionless figure of merit (ZT) of 0.70 at 800 °C when measured along [001], although the ZT value along [100] is just moderately high. Mo substitution for Re in ReSi1.75 considerably increases the ZT value along [001] because of the decreased electrical resistivity, while the property improvement is not significant along [100]. On the other hand, Al and Ge substitutions for Si in ReSi1.75 considerably increase the ZT value along [100]. This is also because of the decreased electrical resistivity. When Al is added to ReSi1.75, the value of electrical resistivity is significantly reduced when compared to the binary counterpart and the temperature dependence of electrical resistivity changes from of semiconductor for the binary alloy to of metal for the Al-added alloys.


2018 ◽  
Vol 481 ◽  
pp. 391-396 ◽  
Author(s):  
Fysol Ibna Abbas ◽  
G.M. Bhuiyan ◽  
Md. Riad Kasem

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