Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Journal of Applied Physics ◽

10.1063/1.4868675 ◽

2014 ◽

Vol 115 (11) ◽

pp. 113102 ◽

Author(s):

Yu-Hsuan Lu ◽

Yi-Keng Fu ◽

Shyh-Jer Huang ◽

Yan-Kuin Su ◽

Kang L. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Electron Confinement ◽

Ultraviolet Light Emitting Diodes

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Sandwiching electron blocking layer with p-AlInN layer to enhance hole injection in AlGaN-based deep ultraviolet light-emitting diodes

Materials Research Bulletin ◽

10.1016/j.materresbull.2021.111389 ◽

2021 ◽

pp. 111389

Author(s):

Tariq Jamil ◽

Muhammad Usman ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer

Optics Express ◽

10.1364/oe.27.00a620 ◽

2019 ◽

Vol 27 (12) ◽

pp. A620 ◽

Author(s):

Chunshuang Chu ◽

Kangkai Tian ◽

Jiamang Che ◽

Hua Shao ◽

Jianquan Kou ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.11.029 ◽

2018 ◽

Vol 113 ◽

pp. 472-477 ◽

Author(s):

Chunshuang Chu ◽

Kangkai Tian ◽

Mengqian Fang ◽

Yonghui Zhang ◽

Luping Li ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes With Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer

Journal of Display Technology ◽

10.1109/jdt.2015.2437454 ◽

2015 ◽

Vol 11 (9) ◽

pp. 753-758 ◽

Author(s):

Liwen Cheng ◽

Shudong Wu ◽

Haitao Chen ◽

Daoren Gong ◽

Yuefeng Wei

Keyword(s):

Light Emitting Diodes ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Electron Confinement

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.010 ◽

2015 ◽

Vol 85 ◽

pp. 59-66 ◽

Author(s):

Pai Sun ◽

Xianglong Bao ◽

Songqing Liu ◽

Chunya Ye ◽

Zhaorong Yuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes

Applied Physics Letters ◽

10.1063/1.3679180 ◽

2012 ◽

Vol 100 (4) ◽

pp. 043513 ◽

Keyword(s):

Numerical Analysis ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Bandgap Energy ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Near Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.08.009 ◽

2017 ◽

Vol 110 ◽

pp. 324-329 ◽

Author(s):

Fangzheng Li ◽

Lianshan Wang ◽

Guijuan Zhao ◽

Yulin Meng ◽

Huijie Li ◽

...

Keyword(s):

Quantum Well ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Performance Enhancement ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Ultraviolet Light Emitting Diodes

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High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

Optics Letters ◽

10.1364/ol.400917 ◽

2020 ◽

Vol 45 (18) ◽

pp. 5125

Author(s):

Ravi Teja Velpula ◽

Barsha Jain ◽

Swetha Velpula ◽

Hoang-Duy Nguyen ◽

Hieu Pham Trung Nguyen

Keyword(s):

Ultraviolet Light ◽

High Performance ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Barrier Structure ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Nanoscale Research Letters ◽

10.1186/s11671-018-2539-9 ◽

2018 ◽

Vol 13 (1) ◽

Author(s):

Zi-Hui Zhang ◽

Sung-Wen Huang Chen ◽

Chunshuang Chu ◽

Kangkai Tian ◽

Mengqian Fang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Mg Doping ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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