Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions

We compare the low-temperature photoluminescence (PL) intensities of a range of GaInN/GaN quantum well (QW) structures under identical excitation conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that low-temperature PL efficiencies of several samples, which show close to 100% IQE in time-resolved PL, saturate at nearly an identical value. Of course, this is strong indicative of being 100% IQE at low temperature for those efficient samples. Using the low-temperature PL efficiency as a ``Reference'', on the other hand, we observe not only the effects of temperature-independent non-radiative losses on the low-temperature IQE, but also are able to determine the IQE of arbitrary samples on an absolute scale. Furthermore, we prove the experimental results by comparing the low-temperature efficiencies of a sample with an initial 100% IQE after intentionally introducing structural defects with argon-implantation.

Impact of carrier diffusion on internal quantum efficiency of InGaN quantum well structures

Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total. In search for universal factors limiting IQE, the...

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p+-Al0.55Ga0.45N/AlGaN/n+-Al0.55Ga0.45N polarization tunnel junctions (PTJs) were modeled to promote carrier tunneling, suppress current crowding, avoid optical absorption, and further enhance the performance of LEDs. AlGaN with different Al contents in PTJs were optimized by APSYS software to investigate the effect of a polarization-induced electric field (Ep) on hole tunneling in the PTJ. The results indicated that Al0.7Ga0.3N as a dielectric layer can realize a higher hole concentration and a higher radiative recombination rate in Multiple Quantum Wells (MQWs) than Al0.4Ga0.6N as the dielectric layer. In addition, Al0.7Ga0.3N as the dielectric layer has relatively high resistance, which can increase lateral current spreading and enhance the uniformity of the top emitting light of LEDs. However, the relatively high resistance of Al0.7Ga0.3N as the dielectric layer resulted in an increase in the forward voltage, so much higher biased voltage was required to enhance the hole tunneling efficiency of PTJ. Through the adoption of PTJs with Al0.7Ga0.3N as the dielectric layers, enhanced internal quantum efficiency (IQE) and optical output power will be possible.

Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells

Two multiple quantum well (MQW) InGaN/GaN structures emitting green light, without (A) and with (B) an indium (In) volatilization suppression technique (IVST) during growth of the active region, were fabricated. The dependencies of the photoluminescence (PL) spectra upon temperature at different levels of excitation power were investigated. The results indicate that an IVST can increase the In content while suppressing the phase separation caused by volatilization of that In incorporated in the well layers. Also, compared with Structure B with IVST, which contains one phase structure, Structure A without IVST, which contains two separate phases (i.e., an In-rich phase and an In-poor phase), exhibits higher internal quantum efficiency (IQE) at low excitation power and lower IQE at high excitation power. The former is mainly attributed to the stronger In-rich phase-related localization effect of Structure A, because the In-rich phase-related emission dominates the PL spectra of Structure A at a low excitation power; the latter is mainly due to the In-poor phase-related weaker localization effect of Structure A, because the In-poor phase-related emission dominates the PL spectra of Structure A at high excitation power because localized states in this In-rich phase are saturated.

Resonant tunneling in natural photosynthetic systems

The high internal quantum efficiency observed in higher plants remains an outstanding problem in understanding photosynthesis. Several approaches such as quantum entanglement and quantum coherence have been explored. However, none has yet drawn an analogy between superlattices and the geometrical structure of granal thylakoids in leaves. In this paper, we calculate the transmission coefficients and perform numerical simulations using the parameters relevant to a stack of thylakoid discs. We then show that quantum resonant tunneling can occur at low effective mass of particles for 680 nm and 700 nm incident wavelengths corresponding to energies at which photosynthesis occurs.

GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy

We report on the growth, structural, and optical properties of GaAs/GaAsPBi core-shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared optical applications. Scanning electron microscopy shows that although the stems of GaAs/GaAsP and GaAs/GaAsBi core-shell NWs preserve the hexagonal prism shape, the GaAs/GaAsPBi core-shell NWs develop a quasi-three-fold orientational symmetry affected by the hexagonal prismatic core. Detailed structural analyses of a GaAs/GaAsPBi core-shell stem show that it crystallized with zincblende structure with a nominal shell composition of GaAs0.617P0.362Bi0.021. Photoluminescence of GaAs/GaAsPBi core-shell NWs shows the luminescent peak at 1.02 eV with high internal quantum efficiency at room temperature (IQERT ~6%) superior to those of MBE-grown GaAs core NWs and GaAsPBi multiple quantum wells earlier reported. Energy-dispersive X-ray spectroscopy performed on the GaAs/GaAsPBi core-shell NWs yields an estimated bandgap different from the optically measured value. We attribute this discrepancy to the NW compositional fluctuations that also may explain the high IQERT.

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

High-performance terahertz (THz) imaging devices have drawn wide attention due to their significant application in a variety of application fields. Recently, the upconversion device based on the integrated homo-junction interfacial workfunction internal photoemission detector and light-emitting diode (HIWIP-LED) has emerged as a promising candidate for broadband THz upconversion pixelless imaging device. In this paper, systematical investigations on the cryogenic-temperature performances of the LED part in HIWIP-LED devices, including electroluminescence (EL) spectra and the EL efficiency, have been carried out by elaborating the radiative recombination mechanism in the quantum well, internal quantum efficiency, and the light extraction efficiency (LEE) both experimentally and theoretically. On this basis, we have further studied the operation mode of the HIWIP-LED and concluded that the LEE could directly determine the upconversion efficiency. A numerical simulation has been performed to optimize the LEE. Numerical results show that the device with a micro-lens geometry structure could significantly improve the LEE of the LED thereby increasing the upconversion efficiency. An optimal upconversion efficiency value of 0.12 W/W and a minimum noise equivalent power (NEP) of 14 pW/Hz1/2 are achieved using the micro-lens structure together with anti-reflection coating. This work gives a precise description of cryogenic LED performance in the HIWIP-LED device and provides an optimization method for the broadband HIWIP-LED THz upconversion pixelless imaging device.