On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes
2018 ◽
Vol 113
◽
pp. 472-477
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2015 ◽
Vol 85
◽
pp. 59-66
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2018 ◽
Vol 51
(7)
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pp. 075106
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