Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

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Xuan P. A. Gao ◽  
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Topological insulator bismuth selenide (Bi2Se3) thin films with a thickness of 6.0 quintuple layers (QL) to 23 QL are deposited using pulsed laser deposition (PLD).


2019 ◽  
Vol 684 ◽  
pp. 31-35 ◽  
Author(s):  
E.I. Rogacheva ◽  
S.I. Menshikova ◽  
A.Yu Sipatov ◽  
O.N. Nashchekina

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