Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering

Epitaxial growth of Bi 2 Se 3 thin films is of great current interest due to the advantages in spintronics and thermoelectrical applications. In this paper, Bi 2 Se 3 thin films on Si (111) substrate have been prepared via magnetron sputtering deposition with post-annealing treatment and their microstructures and electrical transport properties were studied. Good quality with highly c-axis oriented films could be obtained after post-annealing treatment. The annealing temperature (T a ) obviously affected the phase structures and electrical properties. The crystallinity and the lattice parameters c of the Bi 2 Se 3 thin-films increased with increasing T a . The relative atomic ratio of Se / Bi decreased with increasing T a and large number of Se vacancies was discovered in films with T a = 350° C . The resistivity of films decreased monotonously and showed weakly metallic resistivity with the increase of T a . Non-saturated high-field linear magnetoresistance and weak antilocalization were found in films with higher T a .

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The effect of sputtering power and pressure on the morphology and electrical transport properties of topological insulator Bi2Se3 thin films prepared by magnetron sputtering

International Journal of Modern Physics B ◽

10.1142/s0217979218501953 ◽

2018 ◽

Vol 32 (16) ◽

pp. 1850195 ◽

Cited By ~ 2

Author(s):

J. Zhang ◽

R. Jin ◽

Q. Y. Liu ◽

T. Zhao ◽

K. Zhao ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Topological Insulator ◽

Electrical Transport ◽

Key Factors ◽

Electrical Transport Properties ◽

High Quality ◽

Working Pressure ◽

Sputtering Power ◽

Bulk Carriers

Epitaxial growth of thin films is an effective approach to minimize the contribution of bulk carriers for topological insulator (TI) Bi2Se3. Parameters used in preparation process are key factors for growing high quality thin films, especially for TI films. In this paper, magnetron sputtering was used for growing Bi2Se3 thin films on Si (100) substrates. Different working pressure and sputtering power were investigated. High-quality films could be obtained under relatively low pressure and low power. Linear and nonsaturated high-field linear magnetoresistance (LMR) was observed in high-quality films.

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Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering

Journal of Applied Physics ◽

10.1063/5.0071807 ◽

2021 ◽

Vol 130 (22) ◽

pp. 225301

Author(s):

A. Miyashita ◽

M. Maekawa ◽

C. Suzuki ◽

S. Yamamoto ◽

A. Kawasuso ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Transport Properties ◽

Electrical Transport ◽

Electrical Transport Properties ◽

Vacancy Defects ◽

Effect Of Disorder

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Resistive switching in diamondoid thin films

Scientific Reports ◽

10.1038/s41598-020-76093-3 ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

A. Jantayod ◽

D. Doonyapisut ◽

T. Eknapakul ◽

M. F. Smith ◽

W. Meevasana

Keyword(s):

Thin Film ◽

Thin Films ◽

Transport Properties ◽

Resistive Switching ◽

Electrical Transport ◽

Hysteresis Curve ◽

Applied Potential ◽

Electrical Transport Properties ◽

Non Volatile Memory ◽

Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

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