Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy
Keyword(s):
Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells
2017 ◽
Vol 473
◽
pp. 55-59
◽
Keyword(s):
Growth of InGaAs Solar Cells on InP(001) Miscut Substrates Using Solid‐Source Molecular Beam Epitaxy
2019 ◽
Vol 217
(3)
◽
pp. 1900512
◽
2004 ◽
Vol 23
(3-4)
◽
pp. 352-355
◽
2017 ◽
Vol 18
(1)
◽
pp. 307-315
◽