FM modulation is investigated as a technique for accurately measuring the linewidths of Lorentzian resonances observed by stimulated Raman scattering difference frequency tuning. A normalized linewidth is obtained from the ratio of the nth to the ( n + 1)th harmonic content of the detected signal. Possible applications in temperature measurement are discussed.
The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.
Перестройка спектра терагерцового стимулированного излучения при внутрицентровом оптическом возбуждении одноосно-деформированного Si : Bi