Phosphorescence and optically detected magnetic resonance spectra of spin triplet states in neat KCrO3F, KCrO3Cl and K2Cr2O7

1985 ◽  
Vol 56 (4) ◽  
pp. 923-934 ◽  
Author(s):  
R.M. Miller ◽  
D.S. Tinti
1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
O.O. Awadelkarim ◽  
B. Monemar ◽  
J.L. Lindström ◽  
G.S. Oehrlein

AbstractWe present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a di-hydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the non-equilibrium free carriers is also demonstrated.


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