Analysis of crystal growth kinetics in undercooled melts by infrared thermography

2015 ◽  
Vol 12 (2) ◽  
pp. 237-251 ◽  
Author(s):  
Alexandre Godin ◽  
Marie Duquesne ◽  
Elena Palomo del Barrio ◽  
Junko Morikawa
Author(s):  
Dieter M. Herlach ◽  
Daniel Simons ◽  
Pierre-Yves Pichon

We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge 100− x Si x ( x  = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue ‘From atomistic interfaces to dendritic patterns’.


2013 ◽  
Vol 215-216 ◽  
pp. 903-912 ◽  
Author(s):  
Mary Hanhoun ◽  
Ludovic Montastruc ◽  
Catherine Azzaro-Pantel ◽  
Béatrice Biscans ◽  
Michèle Frèche ◽  
...  

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