Crystal growth models and Ising models. II. Constraints on high-field expansions

1977 ◽  
Vol 10 (6) ◽  
pp. 1023-1030 ◽  
Author(s):  
I G Enting
Keyword(s):  
Crystal Growth ◽  
High Field ◽  
Growth Models ◽  
Ising Models

Solution of crystal growth disorder models by imposition of symmetry

1977 ◽  
Vol 353 (1674) ◽  
pp. 363-376 ◽  
Keyword(s):  
Crystal Growth ◽  
Simple Form ◽  
Growth Models ◽  
Ising Models ◽  
Statistical Properties ◽  
General Will ◽  
Correlation Field ◽  
Point Correlation ◽  
Growth Disorder

By considering the relation between Ising models and growth models, solutions have been obtained for a class of growth models in which symmetry has been imposed on the statistical properties of the lattices. It has been found that when mm symmetry is imposed the resulting two-point correlation field has an extremely simple form even though considerable diversity of three- and four-point correlations may still exist. It is suggested that imposition of symmetry on growth models in general will yield soluble systems.

HIGH-FIELD CRYSTAL GROWTH

1986 ◽  
Vol 47 (C7) ◽  
pp. C7-75-C7-80
Author(s):  
F. OKUYAMA
Keyword(s):  
Crystal Growth ◽  
High Field

Reformulation of the path probability method and its application to crystal growth models

1988 ◽  
Vol 53 (5-6) ◽  
pp. 1081-1101 ◽  
Author(s):  
Koh Wada ◽  
Makoto Kaburagi ◽  
Takashi Uchida ◽  
Ryoichi Kikuchi
Keyword(s):  
Crystal Growth ◽  
Growth Models ◽  
Probability Method ◽  
Path Probability Method
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