Ion-beam-assisted deposition of biaxially aligned yttria-stabilized zirconia template films on metallic substrates for YBCO-coated conductors

2002 ◽  
Vol 15 (7) ◽  
pp. 1083-1087 ◽  
Author(s):  
B Ma ◽  
M Li ◽  
B L Fisher ◽  
U Balachandran
2000 ◽  
Vol 15 (5) ◽  
pp. 1110-1119 ◽  
Author(s):  
T. G. Holesinger ◽  
S. R. Foltyn ◽  
P. N. Arendt ◽  
H. Kung ◽  
Q. X. Jia ◽  
...  

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.


2008 ◽  
Vol 1150 ◽  
Author(s):  
Ruben Hühne ◽  
Konrad Güth ◽  
Martin Kidszun ◽  
Rainer Kaltofen ◽  
Vladimir Matias ◽  
...  

AbstractIon-beam assisted deposition (IBAD) offers the possibility to prepare thin textured films on amorphous or non-textured substrates. In particular, the textured nucleation of TiN is promising for the development of a conducting buffer layer architecture for YBCO coated conductors based on the IBAD approach. Accordingly, cube textured IBAD-TiN layers have been deposited reactively using pulsed laser deposition on Si/Si3N4 substrates as well as on polished Hastelloy tapes using different amorphous seed layers. Metallic buffer layers such as Au, Pt or Ir were grown epitaxially on top of the TiN layer showing texture values similar to the IBAD layer. Smooth layers were obtained using a double layer of Au/Pt or Au/Ir. Biaxially textured YBCO layers were achieved using SrRuO3 or Nb-doped SrTiO3 as a conductive oxide cap layer. Finally, different amorphous conducting seed layers were applied for the IBAD-TiN process. Highly textured TiN films were achieved on amorphous Ta0.75Ni0.25 layers showing a similar in-plane orientation of about 8° as on standard seed layers.


1999 ◽  
Vol 9 (2) ◽  
pp. 1964-1966 ◽  
Author(s):  
J.R. Groves ◽  
P.N. Arendt ◽  
S.R. Foltyn ◽  
R.F. DePaula ◽  
E.J. Peterson ◽  
...  

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