The microstructure of continuously processed Yba2Cu3Oy coated conductors with underlying CeO2 and ion-beam-assisted yttria-stabilized zirconia buffer layers

2000 ◽  
Vol 15 (5) ◽  
pp. 1110-1119 ◽  
Author(s):  
T. G. Holesinger ◽  
S. R. Foltyn ◽  
P. N. Arendt ◽  
H. Kung ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Ion Beam ◽  
Misfit Strain ◽  
Critical Currents ◽  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Inconel 625 ◽  
Microstructural Development ◽  
Stabilized Zirconia

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.

Biaxially textured yttria stabilized zirconia buffer layers on rotating cylindrical surfaces

1997 ◽  
Vol 12 (3) ◽  
pp. 593-595 ◽  
Author(s):  
J. Hoffmann ◽  
J. Dzick ◽  
J. Wiesmann ◽  
K. Heinemann ◽  
F. Garcia-Moreno ◽  
...  
Keyword(s):  
Full Width Half Maximum ◽  
Ion Beam ◽  
Large Fraction ◽  
Rotation Velocity ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Cylinder Surface ◽  
Stabilized Zirconia ◽  
Ion Beam Assisted Deposition ◽  
Current Densities

Biaxially textured yttria stabilized zirconia (YSZ) buffer layers are prepared on rotating cylindrical surfaces by an ion-beam-assisted deposition (IBAD) process. A large fraction of the cylinder surface can be coated at the same time, resulting in an effective deposition rate of 40 nm/h for the whole tube circumference (diameter of the tube 12 mm). The in-plane alignment depends on the total film thickness and the rotation velocity. The best in-plane textures achieved so far with a full width half maximum (FWHM) value of 27° are sufficient for the preparation of YbaCuO films with critical current densities above 105 A cm−2 at 77 K and self-fields.

New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors

2003 ◽  
Vol 18 (4) ◽  
pp. 919-928 ◽  
Author(s):  
S. Sambasivan ◽  
I. Kim ◽  
S. Barnett ◽  
M. A. Zurbuchen ◽  
J. Ji ◽  
...  
Keyword(s):  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Significant Advance ◽  
Nitride Film ◽  
Stabilized Zirconia ◽  
New Approach ◽  
Biaxial Texture ◽  
Current Densities ◽  
Sputter Deposited

A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm2 have been achieved for YBa2Cu3O7-δ layers on the YSZ buffer, with an intermediate CeO2 layer. The process consists of reactive sputtering of a YxZr1−xN film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.

Fabrication of Biaxially Oriented YBCO on (00l) Biaxially Oriented Yttria-Stabilized-Zirconia on Polycrystalline Substrates

1994 ◽  
Vol 341 ◽  
Author(s):  
Paul Arendt ◽  
Steve Foltyn ◽  
Xin Di Wu ◽  
John Townsend ◽  
Chris Adams ◽  
...  
Keyword(s):  
Ybco Film ◽  
Ion Beam ◽  
Density Measurement ◽  
Barium Copper Oxide ◽  
Yttria Stabilized Zirconia ◽  
Transport Critical Current Density ◽  
Stabilized Zirconia ◽  
Barium Copper ◽  
Yttrium Barium ◽  
Ion Beam Sputter Deposition

AbstractIon-assisted, ion-beam sputter deposition is used to obtain (00l) biaxially oriented films of cubic yttria-stabilized-zirconia (YSZ) on polycrystalline metal substrates. Yttrium-barium-copper-oxide (YBCO) is then heteroepitaxially-pulse-laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14° and 10° respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/cm2 at 75K and 0T. At 75K, the total dc transport current in a 1 cm wide YBCO film is 23 A.

Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on (100)Si Using Textured YBa2Cu3O7−δ and Yttria-Stabilized Zirconia Buffer Layers by Laser Physical Vapor Deposition Technique

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
A. Morimoto ◽  
V.N. Shukla ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Processing Parameters ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Vapor Deposition Technique ◽  
Pzt Films ◽  
Physical Vapor Deposition Technique

ABSTRACTWe have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 nanoseconds). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using X-ray diffraction, high-resolution transmission electron microscopy and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9X10−4 torr) at 775°C on (001)Si substrate having <001>YSZ// <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mtorr) at 650°C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4–0.6 torr, respectively. The laser fluence to deposit this multistructure was 2.5–5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coersive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

Reducing the interfacial reaction between borosilicate sealant and yttria-stabilized zirconia electrolyte by addition of HfO2

2015 ◽  
Vol 35 (8) ◽  
pp. 2427-2431 ◽  
Author(s):  
Shunrun Chen ◽  
Zhiwu Yu ◽  
Qi Zhang ◽  
Junping Wang ◽  
Teng Zhang ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Zirconia Electrolyte

Dependence of the Electron Beam Energy and Types of Surface to Determine EBSD Indexing Reliability in Yttria-Stabilized Zirconia

2012 ◽  
Vol 18 (2) ◽  
pp. 371-378 ◽  
Author(s):  
Laxmikant V. Saraf
Keyword(s):  
Electron Beam ◽  
Grain Orientation ◽  
Beam Energy ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Yttria Stabilized Zirconia ◽  
Electron Beam Energy ◽  
Stabilized Zirconia ◽  
Carbon Coated ◽  
Grain Misorientation

AbstractElectron backscatter diffraction (EBSD) is a powerful technique for surface microstructure analysis. EBSD analysis of cubic yttria-stabilized zirconia (YSZ) is demonstrated. The statistics related to EBSD indexing reliability shows that the probability of accurate grain orientation detection increased significantly when the electron beam energy was increased from 10 to 30 kV. As a result of better sampling with increased interaction volume, a disparity between local and average grain misorientation angle also exhibited the dependence of the electron beam energy to determine the accuracy of grain orientation. To study EBSD indexing reliability as a function of surface roughness and overlayer formation, rapid EBSD measurement tests were performed on (a) YSZ surfaces ion-polished at ion beam energies of 65 nA at 30 kV and 1 nA at 30 kV and (b) carbon-coated versus uncoated YSZ surfaces. The EBSD results at both 10 and 30 kV electron beam energies indicate that EBSD indexing reliability is negatively affected by higher ion beam milling current and amorphous overlayer formation.

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