Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechanism by displacement damage are controversial. In this paper, the enhanced low-neutron-flux sensitivity (ELNFS) effect in Boron-doped silicon and the relationship between the ELNFS effect and doping concentration are further explored. Boron-doped silicon is sensitive to neutron flux and ELNFS effect could be greatly reduced by increasing the doping concentration in the flux range of 5 × 109–5 × 1010 n cm−2 s−1. The simulation based on the theory of diffusion-limited reactions indicated that the ELNFS in boron-doped silicon might be caused by the difference in the concentration of remaining vacancy-related defects (Vr) under different neutron fluxes. The ELNFS effect in silicon becomes obvious when the (Vr) is close to the boron doping concentration and decreased with the increase in boron doping concentration due to the remaining vacancy-related defects being covered. These conclusions are confirmed by the p+-n-p Si-based bipolar transistors since the ELNFS effect in the low doping silicon increased the reverse leakage of the bipolar transistors and the common-emitter current gain (β) dominated by highly doped silicon remained unchanged with the decrease in the neutron flux. Our work demonstrates that the ELNFS effect in boron-doped silicon can be well explained by noise diagnostic analysis together with electrical methods and simulation, which thus provide the basis for detecting the enhanced low-particle-flux damage effect in other semiconductor materials.
Stochastic Gain Degradation in III–V Heterojunction Bipolar Transistors Due to Single Particle Displacement Damage
