bipolar transistors
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Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Wieslaw Kuzmicz

Logic gates made of pairs of NPN and PNP bipolar transistors, similar to CMOS logic gates, have been proposed and patented long ago but did not find any practical application until now. Other bipolar technologies (TTL, TTL-S, ECL), once the technologies of choice for digital systems, were abandoned and superseded by CMOS. In this paper it is shown that now, when truly complementary pairs of bipolar transistors can be made, properly biased bipolar gates similar to CMOS gates are feasible, can be thermally stable and find practical applications.


Author(s):  
Yinlong Wei ◽  
Kuibo Lan ◽  
Zhi Wang ◽  
Junqing Wei ◽  
Zhenqiang Ma ◽  
...  

The DC and AC performances of proton radiated Silicon-Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) with different emitter areas at liquid nitrogen temperature (77 K), room temperature and heating hotplate (393 K) were presented in this work. Performance dependence on the emitter area and temperature was investigated. Results showed that SiGe HBTs with a large emitter area had more damage by proton radiation. Furthermore, the SiGe HBTs showed better tolerance to proton radiation at extreme temperatures than at room temperature. To reveal the underlying mechanism, the radiated SiGe HBTs were modeled based on the device structure and parameters. The electron density, Shockley–Read–Hall (SRH) recombination and carrier mobility were extracted from the device model and demonstrated to have major impacts on the performance dependence of the radiated SiGe HBTs. The results provide useful guidance for the application of SiGe HBTs at extreme environments.


2021 ◽  
Vol 2021 (4) ◽  
pp. 499-506
Author(s):  
Alexander I. CHUDAKOV ◽  
◽  
Valery O. IVASHCHENKO ◽  
Alexey P. ZELENCHENKO ◽  
Nikolay V. LYSOV ◽  
...  

Objective: The use of pulse conversion of electricity on direct-current traction rolling stock is discussed. Methods: A variant of the system for regulating the operating modes of traction motors of suburban electric trains using a pulse converter based on insulated gate bipolar transistors is described. (IGBT). Results: The proposed impulse control system is presented as a possible option for the modernization of the applied control systems, which makes it possible to improve the traction and energy indicators of suburban electric trains. The advantages of pulse converters based on IGBTs are shown in comparison with converters based on one- and two-operation thyristors. A simplifi ed electrical diagram of the power circuit of a motor car with a pulse converter is presented, a description of the operation of the power circuit in the traction mode and in the modes of rheostatic and regenerative braking is given. Practical importance: The presented results of the technical and economic comparison of the control systems of the ED4M electric train with a Современные технологии – транспорту 505 ISSN 1815-588Х. Известия ПГУПС 2021/4 contactor-rheostat control system and an electric train with regulation of the operating modes of traction electric motors by a pulse converter based on IGBT prove the best energy effi ciency of an electric train equipped with a pulse control system


Author(s):  
Wieslaw Kuzmicz

Logic gates made of pairs of NPN and PNP bipolar transistors, similar to CMOS logic gates, have been proposed and patented long ago but did not find any practical application until now. Other bipolar technologies (TTL, TTL-S, ECL), once the technologies of choice for digital systems, were abandoned and superseded by CMOS. In this paper it is shown that now, when truly com-plementary pairs of bipolar transistors can be made, properly biased bipolar gates similar to CMOS gates are feasible, can be thermally stable and find practical applications.


Energies ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 7397
Author(s):  
Sadegh Mohsenzade ◽  
Javad Naghibi ◽  
Kamyar Mehran

Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. Second, it reduces the SCF current to a value much less than the saturated current. With the proposed control approach, sudden temperature rise during SCF is controlled, preventing significant failure in IGBTs. The extension of the permissible SCF time is achieved even for the cases with temporary arcs. A simple control loop activates in the SCF condition and does not create slow transients for the IGBT. The results of this paper are validated through simulation and experiment.


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