Invariable mobility edge in a quasiperiodic lattice

2021 ◽  
Author(s):  
Tong Liu ◽  
Shujie Cheng ◽  
Rui Zhang ◽  
Rongrong Ruan ◽  
Houxun Jiang
Keyword(s):  
Mobility Edge

Conduction near a mobility edge

1984 ◽  
Vol 127 (1-3) ◽  
pp. 292-295 ◽  
Author(s):  
M KAVEH
Keyword(s):  
Mobility Edge

Electron-phonon interactions near the mobility edge in disordered semiconductors

1983 ◽  
Vol 59-60 ◽  
pp. 15-24 ◽  
Author(s):  
Morrel H. Cohen ◽  
E.N. Economou ◽  
Costas M. Soukoulis
Keyword(s):  
Mobility Edge ◽  
Disordered Semiconductors

Universal frequency-dependent electronic conductivity near the mobility edge

2002 ◽  
Vol 299-302 ◽  
pp. 346-349 ◽  
Author(s):  
Hiroaki Okamoto ◽  
Toshihiko Toyama ◽  
Kiminori Hattori
Keyword(s):  
Electronic Conductivity ◽  
Mobility Edge ◽  
Frequency Dependent

Thermopower and 1/f Noise Measurements in Amorphous Silicon-Carbon Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
H. M. Dyalsingh ◽  
G. M. Khera ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Power Spectra ◽  
Carbon Films ◽  
Noise Power ◽  
Mobility Edge ◽  
Silicon Carbon ◽  
Noise Measurements ◽  
Noise Statistics ◽  
Hydrogenated Amorphous ◽  
Q Function

ABSTRACTThermopower, conductivity and 1/f noise measurements have been performed on a series of n-type doped hydrogenated amorphous silicon carbon films that are prepared with varying gas phase concentrations of CH4. The increased disorder at the mobility edge associated with alloying is characterized by the Q-function, which is obtained by combining thermopower and conductivity measurements, and is also reflected in the noise power spectra and noise statistics.

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