scholarly journals Crossover between Mott-insulator and band-insulator in the two-orbital Hubbard model

2009 ◽  
Vol 150 (4) ◽  
pp. 042145
Author(s):  
Satoru Odashima
2007 ◽  
Vol 75 (24) ◽  
Author(s):  
G. I. Japaridze ◽  
R. Hayn ◽  
P. Lombardo ◽  
E. Müller-Hartmann

2012 ◽  
Vol 14 (11) ◽  
pp. 115027 ◽  
Author(s):  
Hong-Yu Yang ◽  
A Fabricio Albuquerque ◽  
Sylvain Capponi ◽  
Andreas M Läuchli ◽  
Kai Phillip Schmidt

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Yao Wang ◽  
Yu He ◽  
Krzysztof Wohlfeld ◽  
Makoto Hashimoto ◽  
Edwin W. Huang ◽  
...  

AbstractHow a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-Tc cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La2−xSrxCuO4 (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-Tc cuprates.


2015 ◽  
Vol 115 (23) ◽  
Author(s):  
J. Klinder ◽  
H. Keßler ◽  
M. Reza Bakhtiari ◽  
M. Thorwart ◽  
A. Hemmerich
Keyword(s):  

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