scholarly journals Ultrafast optical signal pulse descending time controlling with deformable mirror and spatial light modulators

2016 ◽  
Vol 679 ◽  
pp. 012046
Author(s):  
Nie Yong-ming ◽  
Yang Liu ◽  
Liu Jun-hui
2005 ◽  
Author(s):  
D. S. Monaghan ◽  
U. Gopinathan ◽  
B. M. Hennelly ◽  
D. P. Kelly ◽  
Thomas J. Naughton ◽  
...  

2000 ◽  
Author(s):  
Alexander Wolter ◽  
Detlef Kunze ◽  
Wolfgang Doleschal ◽  
Hubert Lakner ◽  
Günter Zimmer

Abstract Spatial light modulators (SLM) are electro-optical devices employed as optical pattern generators in applications like projection displays, direct-writing systems for photolithographic patterning, adaptive optics or optical signal processing. Here we report on the “moving liquid mirror” (MLM) as a new micromechanical actuator technology based on a deformable oil film on an aluminum mirror with electrode structure. The actuator is suitable for integration on a silicon backplane as CMOS-addressing circuit. Thus production in standard CMOS-technology is possible. A theoretical analysis of the device behavior is given, and the results of simulations are presented. Measurements on passive devices show good agreement with the simulations. Finally, active MLM-devices have been fabricated. Images can be programmed into the devices and observed under a microscope (figure 1).


1989 ◽  
Vol 28 (22) ◽  
pp. 4900 ◽  
Author(s):  
Dean R. Collins ◽  
Jeffrey B. Sampsell ◽  
Larry J. Hornbeck ◽  
James M. Florence ◽  
P. Andrew Penz ◽  
...  

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


Sign in / Sign up

Export Citation Format

Share Document