Drift-mobility measurements in amorphous semiconductors using traveling-wave method

1983 ◽  
Vol 28 (8) ◽  
pp. 4900-4902 ◽  
Author(s):  
H. Fritzsche ◽  
K. -J. Chen
2000 ◽  
Vol 76 (5) ◽  
pp. 580-582 ◽  
Author(s):  
J. Yin ◽  
L. Wang ◽  
J. M. Liu ◽  
K. J. Chen ◽  
Z. G. Liu ◽  
...  

1999 ◽  
Vol 602 ◽  
Author(s):  
L. Wang ◽  
S. Huang ◽  
J. Yin ◽  
X. Huang ◽  
J. Xu ◽  
...  

AbstractThe traveling wave (TW) method has been utilized to investigate the transport mechanism in paramagnetic-insulator state of La0.75Sr0.11Ca0.14MnO3 films. The drift mobility of the films increased from 2.5 × 10−2 cm2/Vs at 310 K to about 9.2 × 10−2 cm2/Vs at 400 K. The Arrhenius behaviors of the conductivity and drift mobility indicate that the transport process in manganites above the Curie temperature is dominated by the thermally assisted hopping of small polarons.


2011 ◽  
Author(s):  
H. Z. Cao ◽  
F. Wang ◽  
J. L. Feng ◽  
H. P. Tan ◽  
Jiachun Li ◽  
...  

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