Large binding-energy variation and alloy disorder inIn0.79Ga0.21As0.44P0.56

1984 ◽  
Vol 29 (8) ◽  
pp. 4772-4774 ◽  
Author(s):  
B. Etienne ◽  
N. V. Tien ◽  
R. E. Nahory ◽  
J. C. Dewinter ◽  
M. Voos ◽  
...  
1996 ◽  
Vol 438 ◽  
Author(s):  
Jing Zhu ◽  
T. Diaz De La Rubia ◽  
Christian Mailhiot

AbstractAb initio planewave pseudopotential method is used to study carbon diffusion and pairing in crystalline silicon. The calculation is performed with a 40 Ry planewave cutoff and 2×2×2 special k-point sampling with a supercell of 64 atoms. It is found that substitutional carbon attracts interstitial Si forming a <001> C interstitial with a large binding energy of 1.45 eV. The interstitial carbon is mobile and can migrate with a migration energy of 0.5 eV. The interstitial carbon can bind further to another substitutional carbon forming a substitutional carbon-interstitutional carbon pair with a binding energy of 1.0 eV. This model is used to understand the effect of high C concentration on the transient enhanced diffusion in Si.


2005 ◽  
Vol 109 (35) ◽  
pp. 8055-8063 ◽  
Author(s):  
Yuu Kameno ◽  
Atsushi Ikeda ◽  
Yoshihide Nakao ◽  
Hirofumi Sato ◽  
Shigeyoshi Sakaki

2003 ◽  
Vol 128 (1) ◽  
pp. 15-18 ◽  
Author(s):  
Y. Kato ◽  
D. Ichii ◽  
K. Ohashi ◽  
H. Kunugita ◽  
K. Ema ◽  
...  

1986 ◽  
Vol 34 (11) ◽  
pp. 8118-8121 ◽  
Author(s):  
Thomas A. Rabedeau ◽  
Timothy S. Sullivan

1996 ◽  
Vol 439 ◽  
Author(s):  
Jing Zhu ◽  
T. Diaz De La Rubia ◽  
Christian Mailhiot

AbstractAb initio planewave pseudopotential method is used to study carbon diffusion and pairing in crystalline silicon. The calculation is performed with a 40 Ry planewave cutoff and 2×2×2 special k-point sampling with a supercell of 64 atoms. It is found that substitutional carbon attracts interstitial Si forming a <001> C interstitial with a large binding energy of 1.45 eV. The interstitial carbon is mobile and can migrate with a migration energy of 0.5 eV. The interstitial carbon can bind further to another substitutional carbon forming a substitutional carbon-interstitutional carbon pair with a binding energy of 1.0 eV. This model is used to understand the effect of high C concentration on the transient enhanced diffusion in Si.


1996 ◽  
Vol 166 (4) ◽  
pp. 447-448 ◽  
Author(s):  
Vladimir I. Belyavskii ◽  
Yurii V. Kopaev ◽  
N.V. Kornyakov

Author(s):  
Philip Isett

This chapter presents the equations and calculations for energy approximation. It establishes the estimates (261) and (262) of the Main Lemma (10.1) for continuous solutions; these estimates state that we are able to accurately prescribe the energy that the correction adds to the solution, as well as bound the difference between the time derivatives of these two quantities. The chapter also introduces the proposition for prescribing energy, followed by the relevant computations. Each integral contributing to the other term can be estimated. Another proposition for estimating control over the rate of energy variation is given. Finally, the coarse scale material derivative is considered.


2016 ◽  
pp. 4024-4028 ◽  
Author(s):  
Sergey I. Pokutnyi ◽  
Wlodzimierz Salejda

The possibility of occurrence of the excitonic  quasimolecule formed of spatially separated electrons and holes in a nanosystem that consists  of  CuO quantum dots synthesized in a silicate glass matrix. It is shown that the major contribution to the excitonic quasimolecule binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes.


Sign in / Sign up

Export Citation Format

Share Document