Calculation of hydrostatic and uniaxial deformation potentials with a self-consistent tight-binding model for Zn-cation-based II-VI compounds

1991 ◽  
Vol 44 (12) ◽  
pp. 6118-6124 ◽  
Author(s):  
D. Bertho ◽  
D. Boiron ◽  
A. Simon ◽  
C. Jouanin ◽  
C. Priester
Keyword(s):  
Tight Binding ◽  
Tight Binding Model ◽  
Uniaxial Deformation ◽  
Binding Model ◽  
Self Consistent

Self-consistent tight binding model adapted for hydrocarbon systems

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner
Keyword(s):  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Self Consistent

scholarly journals Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells

2000 ◽  
Vol 5 (S1) ◽  
pp. 970-976
Author(s):  
A. Bonfiglio ◽  
M. Lomascolo ◽  
G. Traetta ◽  
R. Cingolani ◽  
A. Di Carlo ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Wells ◽  
Electric Fields ◽  
Tight Binding ◽  
Ground Level ◽  
Analytic Model ◽  
Tight Binding Model ◽  
Binding Model ◽  
Emission Energy ◽  
Self Consistent

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.

Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Bonfiglio ◽  
M. Lomascolo ◽  
G. Traetta ◽  
R. Cingolani ◽  
A. Di Carlo ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Wells ◽  
Electric Fields ◽  
Tight Binding ◽  
Ground Level ◽  
Analytic Model ◽  
Tight Binding Model ◽  
Binding Model ◽  
Emission Energy ◽  
Self Consistent

AbstractThe spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.

scholarly journals Relative energetics and structural properties of zirconia using a self-consistent tight-binding model

2000 ◽  
Vol 61 (10) ◽  
pp. 6617-6630 ◽  
Author(s):  
Stefano Fabris ◽  
Anthony T. Paxton ◽  
Michael W. Finnis
Keyword(s):  
Structural Properties ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Self Consistent

A self-consistent tight binding model for hydrocarbon systems: application to quantum transport simulation

2004 ◽  
Vol 16 (39) ◽  
pp. 6851-6866 ◽  
Author(s):  
D A Areshkin ◽  
O A Shenderova ◽  
J D Schall ◽  
S P Adiga ◽  
D W Brenner
Keyword(s):  
Quantum Transport ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Transport Simulation ◽  
Self Consistent
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